BC857B Taiwan Semiconductor

BC856A/B, BC857A/B/C, BC858A/B/C Taiwan Semiconductor 200mW, PNP Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V -80 V CBO High surge current capability V -65 V CEO Moisture sensitivity level: level 1, per J-STD-020 V -5 V RoHS Compliant EBO Halogen-free according to IEC 61249-2-21 I -0.1 A C h 250-800 FE Package SOT-23 APPLICATIONS Configuration Single die Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 0.008 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BC856A 3A BC856B 3B BC857A 3E BC857B 3F Marking code on the device BC857C 3G BC858A 3J BC858B 3K BC858C 3L Power dissipation P 200 mW D 1 Version: I2001 BC856A/B, BC857A/B/C, BC858A/B/C Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BC856 -80 Collector-base voltage BC857 V -50 V CBO BC858 -30 BC856 -65 Collector-emitter voltage BC857 V -45 V CEO BC858 -30 Emitter-base voltage V -5 V EBO Collector current I -0.1 A C T -55 to +150 Junction temperature J C T -55 to +150 Storage temperature C STG ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT - -100 V = -70 V, I = 0 BC856 CB E - -100 Collector cutoff current V = -45 V, I = 0 BC857 I nA CB E CBO - -100 V = -25 V, I = 0 BC858 CB E - -0.1 Emitter cutoff current V = -5 V, I = 0 I A EB C EBO BC856 -80 - I = -10 A, C BC857 V -50 - Collector-base voltage V CBO I = 0 E BC858 -30 - BC856 -65 - I = -10 mA, C BC857 V -45 - V Collector-emitter voltage CEO I = 0 B BC858 -30 - V -5 - V Emitter-base voltage I = -1 A, I = 0 EBO E C BC856A/BC857A/BC858A 125 250 V = -5 V, CE 220 475 DC current gain BC856B/BC857B/BC858B h FE I = -2 mA C BC857C/BC858C 420 800 Collector-emitter - -0.65 I = -100 mA, I = -5 mA V V C B CE(sat) saturation voltage Base-emitter saturation - -1.10 I = -100 mA, I = -5 mA V V C B BE(sat) voltage V = -5 V , I = -10 mA, CE C 100 - Transition frequency f MHz T f= 100MHz 2 Version: I2001