X-On Electronics has gained recognition as a prominent supplier of GT1003B MOSFETs across the USA, India, Europe, Australia, and various other global locations. GT1003B MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

GT1003B GOFORD

GT1003B electronic component of GOFORD
GT1003B GOFORD
GT1003B MOSFETs
GT1003B  Semiconductors

Images are for reference only
See Product Specifications
Part No. GT1003B
Manufacturer: GOFORD
Category: MOSFETs
Description: MOSFET N Trench 100V 7A 3V @ 250uA 140 mΩ @ 3.5A,10V SOT-23 RoHS
Datasheet: GT1003B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Category
Rohs
Package
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Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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We are delighted to provide the GT1003B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT1003B and other electronic components in the MOSFETs category and beyond.

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The GT1003B MOSFET N Trench 100V 7A 3V @ 250uA 140 mO @ 3.5A,10V SOT-23 RoHS is a three-terminal power transistor manufactured by GOFORD. This N-channel MOSFET is designed for switching applications and is RoHS-compliant for safe use in the European Union. The device is powered using no more than 3V@250uA and can handle up to 7A of continuous current with a 100V maximum drain-source voltage. The maximum Rdson resistance is rated at 140 mO @ 3.5A and 10V, allowing for improved energy efficiency and thermal efficiencies. The transistor is packaged in a SOT-23 package, making it small and space-efficient for use in compact applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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