X-On Electronics has gained recognition as a prominent supplier of S8050 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. S8050 Bipolar Transistors - BJT are a product manufactured by High Diode. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

S8050 High Diode

Name: S8050
Brand: High Diode
SKU: S8050_High_Diode
Availability: InStock
Rating: 5 (11 reviews)

S8050 electronic component of High Diode

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See Product Specifications

Part No.	S8050
Manufacturer:	High Diode
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-23 RoHS
Datasheet:	S8050 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0312 ea
Line Total: USD 1.56

Availability - 1552
Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ: 50 Multiples: 50
Pack Size: 50

S8050 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1552

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 50
Multiples : 50

50 : USD 0.0312
500 : USD 0.025
3000 : USD 0.0143
6000 : USD 0.0127
24000 : USD 0.0113
51000 : USD 0.0106

Specifications

Manufacturer

High Diode High Diode

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 23 SOT - 23

Brand Category

High Diode High Diode

Collector Cut-Off Current Icbo

100 nA 100 nA

Collector-Emitter Breakdown Voltage Vceo

25 V 25 V

Power Dissipation Pd

300 mW 300 mW

Collector Current Ic

500 mA 500 mA

Dc Current Gain Hfe@Ic Vce

- -

Transition Frequency Ft

150MHz 150MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

600 mV @500 mA , 50 mA 600 mV @500 mA , 50 mA

Transistor Type

NPN NPN

Operating Temperature

+ 150 C @ (Tj) + 150 C @ (Tj)

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We are delighted to provide the S8050 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S8050 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The S8050 SOT-23 RoHS manufactured by High Diode is a high-performance bipolar junction NPN/PNP small signal transistor. It has moderately high gain, small package size, and low collector-emitter saturation voltage. This PNP/NPN transistor is designed for use in linear and switching applications such as amplifiers, drivers, protection circuits, and relays. It is optimized for use in high-speed pulse circuits where its low base-emitter capacitance is advantageous. The S8050 has a maximum collector current up to 500mA, a maximum collector-emitter voltage of 40V, and a maximum power dissipation of 625mW. Its maximum gain bandwidth product is 500MHz.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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