X-On Electronics has gained recognition as a prominent supplier of S8050 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. S8050 Bipolar Transistors - BJT are a product manufactured by Bourne. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

S8050 Bourne

Name: S8050
Brand: Bourne
SKU: S8050_Bourne
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	S8050
Manufacturer:	Bourne
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 500mA 25V SOT-23 (SOT-23-3) RoHS
Datasheet:	S8050 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0234 ea
Line Total: USD 1.17

Availability - 54223
Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ: 50 Multiples: 50
Pack Size: 50

S8050 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

54223

Ship by Tue. 18 Mar to Fri. 21 Mar

MOQ : 50
Multiples : 50

50 : USD 0.0234
500 : USD 0.0184
3000 : USD 0.0113
6000 : USD 0.01
24000 : USD 0.0089
51000 : USD 0.0084

Specifications

Manufacturer

Bourne Bourne

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category

Bourne Bourne

Transistor Type

npn npn

Current - Collector Ic Max

500 mA 500 mA

Voltage - Collector Emitter Breakdown Max

25 V 25 V

Power - Max

300 mW 300 mW

Collector Cut-Off Current Icbo

100 nA 100 nA

Collector-Emitter Breakdown Voltage Vceo

25 V 25 V

Power Dissipation Pd

300 mW 300 mW

Collector Current Ic

500 mA 500 mA

Dc Current Gain Hfe@Ic Vce

120@50 mA , 1V 120@50 mA , 1V

Transition Frequency Ft

150MHz 150MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

600 mV @500 mA , 50 mA 600 mV @500 mA , 50 mA

Operating Temperature

+ 150 C @ (Tj) + 150 C @ (Tj)

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Additional Infomation About Product

The S8050 transistor is a RoHS-compliant NPN bipolar junction transistor (BJT) manufactured by Bourne. It has a SOT-23-3 surface-mount package and is designed with an emitter-base breakdown voltage of 25V and a maximum current gain of 500mA. It features relatively low power consumption, high gain-bandwidth product performance, and excellent switching characteristics. It is suitable for use in circuits requiring precise circuit current regulation and margin for temperature drift.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BORN may also be referenced as

Bourne Semicon (Shenzhen)

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