X-On Electronics has gained recognition as a prominent supplier of S8050 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. S8050 Bipolar Transistors - BJT are a product manufactured by Bourne. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

S8050 Bourne

Name: S8050
Brand: Bourne
SKU: S8050_Bourne
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	S8050
Manufacturer:	Bourne
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 500mA 25V SOT-23 (SOT-23-3) RoHS
Datasheet:	S8050 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0164 ea
Line Total: USD 0.82

Availability - 21734
Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ: 50 Multiples: 50
Pack Size: 50

S8050 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

21734

Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ : 50
Multiples : 50

50 : USD 0.0164
500 : USD 0.0132
3000 : USD 0.011
6000 : USD 0.0098
24000 : USD 0.0089
51000 : USD 0.0085

Specifications

Manufacturer
Bourne Bourne

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs
y y

Package
SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category
Bourne Bourne

Transistor Type
npn npn

Current - Collector Ic Max
500 mA 500 mA

Voltage - Collector Emitter Breakdown Max
25 V 25 V

Power - Max
300 mW 300 mW

Collector Cut-Off Current Icbo
100 nA 100 nA

Collector-Emitter Breakdown Voltage Vceo
25 V 25 V

Power Dissipation Pd
300 mW 300 mW

Collector Current Ic
500 mA 500 mA

Dc Current Gain Hfe@Ic Vce
120@50 mA , 1V 120@50 mA , 1V

Transition Frequency Ft
150MHz 150MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
600 mV @500 mA , 50 mA 600 mV @500 mA , 50 mA

Operating Temperature
+ 150 C @ (Tj) + 150 C @ (Tj)

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We are delighted to provide the S8050 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S8050 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The S8050 transistor is a RoHS-compliant NPN bipolar junction transistor (BJT) manufactured by Bourne. It has a SOT-23-3 surface-mount package and is designed with an emitter-base breakdown voltage of 25V and a maximum current gain of 500mA. It features relatively low power consumption, high gain-bandwidth product performance, and excellent switching characteristics. It is suitable for use in circuits requiring precise circuit current regulation and margin for temperature drift.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

BORN may also be referenced as

Bourne Semicon (Shenzhen)

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