FETThe HXY2301AI is a P Channel SOT-23 MOSFET manufactured by HXY MOSFET that offers robust performance features and is certified for RoHS compliance. The features of this device include a drain-source voltage of 20V, a peak drain current of 3A, a size of SOT-23, an on-resistance of 110mO@4.5V, and a gate-source voltage of 3A. This device is specifically designed for applications such as power management, mobile devices, and motor drives. The device also has built-in ESD protection, and it provides excellent temperature stability. This device is ideal for a variety of applications where efficiency, reliability, and performance are critical.