FET?The HXY3401MI is a 30V, 4.2A, 49mO@10V, 4.2A P Channel SOT-23-3L MOSFET manufactured by HXY MOSFET. This MOSFET features a drain-to-source breakdown voltage of 30V, a drain-to-source on-state resistance of 49mO@10V, and a maximum continuous drain current of 4.2A. It is compliant with RoHS regulations. This MOSFET is well-suited for a variety of applications, including power distribution, lighting control, and high power switching.