X-On Electronics has gained recognition as a prominent supplier of HXY3N10AI MOSFETs across the USA, India, Europe, Australia, and various other global locations. HXY3N10AI MOSFETs are a product manufactured by HXY MOS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HXY3N10AI HXY MOS

HXY3N10AI electronic component of HXY MOS
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See Product Specifications
Part No.HXY3N10AI
Manufacturer: HXY MOS
Category: MOSFETs
Description: 100V 3A 310mΩ@10V,1A N Channel SOT-23 MOSFETs ROHS
Datasheet: HXY3N10AI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0609 ea
Line Total: USD 0.61 
Availability - 98
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
98
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0609
100 : USD 0.0497
300 : USD 0.044
3000 : USD 0.0371
6000 : USD 0.0337
9000 : USD 0.032

   
Manufacturer
Product Category
Package
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
Input Capacitance Ciss@Vds
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HXY3N10AI from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HXY3N10AI and other electronic components in the MOSFETs category and beyond.

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The HXY3N10AI is a silicon N Channel MOSFET, ROHS certified, manufactured by HXY MOS in a SOT-23 package. It has a breakdown voltage rating of 100V and an on-resistance value of 310mO @ 10V, 1A. The device is capable of handling current up to 3A.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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