FETThe HXY8205ES is a 20V 6A 1.5W 23mO@4.5V 2 N-Channel TSSOP-8 MOSFET manufactured by HXY MOSFET that conforms to the Restriction of Hazardous Substances (RoHS) Directive. It is an epitaxial planar type N-channel enhancement mode insulated gate field-effect transistor designed to provide high DC current gain and withstand high energy pulse. It is suitable for application in power management, DC-DC converter, battery management, synchronous rectifiers, and motor control circuits. The device features a current-limiting resistors, an integrated protection diode, and a gate charge discharge circuit for EMI protection. The MOSFET is capable of handling a wide range of operating voltages, up to a maximum of 20V, and is provided in a TSSOP-8 package.