PD- 90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BV RDS(on) I DSS D IRF450 500V 12A 0.400 TO-3 (TO-204AA) Description Features HEXFET MOSFET technology is the key to IR Hirel advanced Repetitive Avalanche Ratings line of power MOSFET transistors. The efficient geometry and Dynamic dv/dt Rating unique processing of this latest State of the Art design Hermetically Sealed achieves: very low on-state resistance combined with high trans Simple Drive Requirements conductance superior reverse energy and diode recovery dv/dt ESD Rating: Class 3A per MIL-STD-750, capability. Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Value Parameter Units I V = 10V, T = 25C Continuous Drain Current 12 D1 GS C A I V = 10V, T = 100C Continuous Drain Current 7.75 D2 GS C I T = 25C Pulsed Drain Current 48 DM C P T = 25C Maximum Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 8.0 mJ AS I Avalanche Current 12 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery 3.5 V/ns T Operating Junction and J -55 to + 150 T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (Typical) g For footnotes refer to the page 2. 1 2019-07-01 International Rectifier HiRel Products, Inc. IRF450 JANTX2N6770/JANTXV2N6770 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions BV Drain-to-Source Breakdown Voltage 500 V V = 0V, I = 1.0mA DSS GS D BV /T DSS J Breakdown Voltage Temp. Coefficient 0.78 V/C Reference to 25C, I = 1.0mA D R DS(on) 0.4 V = 10V, I = 7.75A GS D2 Static Drain-to-Source On-Resistance 0.5 V = 10V, I = 12A GS D1 V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D Gfs Forward Transconductance 5.5 S V = 15V, I = 7.75A DS D2 I 25 V = 400V, V = 0V DSS DS GS Zero Gate Voltage Drain Current A 250 V = 400V,V = 0V,T =125C DS GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA Gate-to-Source Leakage Reverse -100 V = -20V GS Q Total Gate Charge 55 120 I = 12A G D1 Q Gate-to-Source Charge 5.0 19 V = 250V GS nC DS Q Gate-to-Drain (Miller) Charge 27 70 V = 10V GD GS t Turn-On Delay Time 35 = 250V V d(on) DD tr Rise Time 190 I = 12A D1 ns t Turn-Off Delay Time 170 R = 2.35 d(off) G t Fall Time 130 V = 10V f GS Measured from Drain lead (6mm / 0.25 in from package) to Source Ls +L Total Inductance 6.1 nH D lead (6mm/ 0.25 in from package) C Input Capacitance 2700 V = 0V iss GS C Output Capacitance 600 pF V = 25V oss DS C Reverse Transfer Capacitance 240 = 1.0MHz rss Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions I Continuous Source Current (Body Diode) 12 S A I Pulsed Source Current (Body Diode) 48 SM V Diode Forward Voltage 1.7 V T = 25C,I = 12A, V = 0V SD J S GS t Reverse Recovery Time 1600 ns T = 25C,I = 12A,V 30V rr J F DD Q Reverse Recovery Charge 14 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Thermal Resistance Symbol Parameter Min. Typ. Max. Units R Junction-to-Case 0.83 JC C/W Junction-to-Ambient (Typical socket mount) R JA 30 Footnotes: Repetitive Rating Pulse width limited by maximum junction temperature. V = 50V, starting T = 25C, L= 0.111mH, Peak I = 12A,V = 10V. DD J L GS I 12A, di/dt 130A/s, V 500V, T 150C. Suggested R =2.35 SD DD J G Pulse width 300 s Duty Cycle 2% 2 2019-07-01 International Rectifier HiRel Products, Inc.