X-On Electronics has gained recognition as a prominent supplier of AUIRF1010ZL MOSFETs across the USA, India, Europe, Australia, and various other global locations. AUIRF1010ZL MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AUIRF1010ZL Infineon

AUIRF1010ZL electronic component of Infineon
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Part No.AUIRF1010ZL
Manufacturer: Infineon
Category: MOSFETs
Description: International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms
Datasheet: AUIRF1010ZL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 4.0114
10 : USD 3.3403
100 : USD 2.6825
500 : USD 2.1171
1000 : USD 1.7581
2000 : USD 1.6343
5000 : USD 1.5723
10000 : USD 1.5352
25000 : USD 1.4981
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.7393
3 : USD 2.3734
4 : USD 1.6157
18 : USD 1.5377
N/A

Obsolete
0
MOQ : 50
Multiples : 50
50 : USD 1.1136
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the AUIRF1010ZL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AUIRF1010ZL and other electronic components in the MOSFETs category and beyond.

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AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology V 55V DSS Ultra Low On-Resistance R max. 7.5m DS(on) 175C Operating Temperature Fast Switching I 94A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax I 75A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET S S S Power MOSFET utilizes the latest processing techniques to D G D G achieve extremely low on-resistance per silicon area. Additional G features of this design are a 175C junction operating temperature, 2 TO-220AB D Pak TO-262 fast switching speed and improved repetitive avalanche rating . AUIRF1010Z AUIRF1010ZS AUIRF1010ZL These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide G D S variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF1010Z TO-220 Tube 50 AUIRF1010Z AUIRF1010ZL TO-262 Tube 50 AUIRF1010ZL Tube 50 AUIRF1010ZS 2 AUIRF1010ZS D -Pak Tape and Reel Left 800 AUIRF1010ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 94 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 66 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS I Pulsed Drain Current 360 DM P T = 25C Maximum Power Dissipation 140 W D C Linear Derating Factor 0.90 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 130 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 180 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.11 R JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W R Junction-to-Ambient 62 JA Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-18 AUIRF1010Z/S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.049 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 5.8 7.5 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 33 S V = 25V, I = 75A DS D 20 V = 55 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 63 95 I = 75A g D Q Gate-to-Source Charge 19 nC V = 44V gs DS Q Gate-to-Drain Charge 24 V = 10V gd GS t Turn-On Delay Time 18 V = 28V d(on) DD t Rise Time 150 I = 75A r D ns t Turn-Off Delay Time 36 R = 6.8 d(off) G V = 10V t Fall Time 92 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 2840 V = 0V iss GS C Output Capacitance 420 V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 250 rss pF C Output Capacitance 1630 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 360 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 560 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 75 S (Body Diode) showing the A Pulsed Source Current integral reverse I 360 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A,V = 0V SD J S GS t Reverse Recovery Time 22 33 ns T = 25C ,I = 75A, V = 25V rr J F DD Q Reverse Recovery Charge 15 23 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.05mH, R = 25 , I = 75A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L = 0.05mH, R = 25, I = 75A, V =10V. J G AS GS This is only applied to TO-220AB package. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2017-09-18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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