AUTOMOTIVE GRADE AUIRF1324 HEXFET Power MOSFET Features D V 24V DSS Advanced Process Technology Ultra Low On-Resistance R typ. 1.2m DS(on) 175C Operating Temperature max. 1.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax I 353A D (Silicon Limited) Lead-Free, RoHS Compliant S I 195A Automotive Qualified * D (Package Limited) Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of S D this design are a 175C junction operating temperature, fast switch- G ing speed and improved repetitive avalanche rating . These features TO-220AB combine to make this design an extremely efficient and reliable AUIRF1324 device for use in Automotive applications and a wide variety of other applications. GD S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 353 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 249 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I 1412 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 300 W D C 2.0 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS E 270 Single Pulse Avalanche Energy (Thermally Limited) mJ AS I See Fig. 14, 15, 22a, 22b Avalanche Current A AR E Repetitive Avalanche Energy mJ AR 0.46 dv/dt Peak Diode Recovery V/ns T Operating Junction and J -55 to + 175 T C Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10lb in (1.1N m) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 JC C/W R Case-to-Sink, Flat Greased Surface 0.50 CS R Junction-to-Ambient 62 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A V Drain-to-Source Breakdown Voltage 24 V GS D (BR)DSS V / T Reference to 25C, I = 5.0mA Breakdown Voltage Temp. Coefficient 22 mV/C (BR)DSS J D R V = 10V, I = 195A Static Drain-to-Source On-Resistance 1.2 1.5 m DS(on) GS D V V = V , I = 250A Gate Threshold Voltage 2.0 4.0 V GS(th) DS GS D V = 10V, I = 195A gfs Forward Transconductance 180 S DS D R Internal Gate Resistance 2.3 G I V = 24V, V = 0V Drain-to-Source Leakage Current 20 A DSS DS GS V = 24V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 200 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -200 GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Conditions Symbol Parameter Min. Typ. Max. Units I = 195A Q Total Gate Charge 160 240 g D V = 12V Q Gate-to-Source Charge 84 gs DS nC V = 10V Q Gate-to-Drain Mille) Charge 49 gd GS I = 195A, V =0V, V = 10V Q Total Gate Charge Sync. (Q - Q ) 76 D DS GS sync g gd V = 16V t Turn-On Delay Time 17 DD d(on) I = 195A t Rise Time 190 D r ns t Turn-Off Delay Time 83 R = 2.7 G d(off) t Fall Time 120 V = 10V GS f V = 0V C Input Capacitance 7590 GS iss C V = 24V Output Capacitance 3440 oss DS C pF = 1.0 MHz, See Fig. 5 Reverse Transfer Capacitance 1960 rss C eff. (ER) V = 0V, V = 0V to 19V , See Fig. 11 Effective Output Capacitance (Energy Related) 4700 oss GS DS C eff. (TR) V = 0V, V = 0V to 19V Effective Output Capacitance (Time Related) 4490 oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I MOSFET symbol D Continuous Source Current S 353 (Body Diode) showing the A G I integral reverse Pulsed Source Current SM 1412 S p-n junction diode. (Body Diode) T = 25C, I = 195A, V = 0V V Diode Forward Voltage 1.3 V J S GS SD t Reverse Recovery Time 46 T = 25C V = 20V, rr J R ns 71 T = 125C I = 195A J F Q Reverse Recovery Charge 160 T = 25C di/dt = 100A/s rr J nC 430 T = 125C J I T = 25C Reverse Recovery Current 7.7 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calcuted continuous current based on maximum allowable junction Pulse width 400s duty cycle 2%. temperature Bond wire current limit is 195A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time oss limitation arising from heating of the device leds may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. Limited by T , starting T = 25C, L = 0.014mH Jmax J R = 25 , I = 195A, V =10V. Part not recommended for use G AS GS above this value . I 195A, di/dt 450 A/s, V V , T 175C. SD DD (BR)DSS J 2 www.irf.com