AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features V 24V DSS Advanced Process Technology R typ. 1.3m DS(on) Ultra Low On-Resistance max. Dynamic dV/dT Rating 1.65m 175C Operating Temperature I 340A D (Silicon Limited) Fast Switching I 195A D (Package Limited) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET S S D Power MOSFET utilizes the latest processing techniques to achieve G G 2 extremely low on-resistance per silicon area. Additional features of D Pak TO-262 this design are a 175C junction operating temperature, fast AUIRF1324S AUIRF1324L switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and a wide variety Gate Drain Source of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF1324L TO-262 Tube 50 AUIRF1324L Tube 50 AUIRF1324S 2 AUIRF1324S D -Pak Tape and Reel Left 800 AUIRF1324STRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 340 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 240 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I Pulsed Drain Current 1420 DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 270 mJ AS I Avalanche Current See Fig.14,15, 18a, 18b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 0.46 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 JC C/W 2 R Junction-to-Ambient (PCB Mount), D Pak 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-11 AUIRF1324S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 24 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 22 mV/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.3 1.65 m V = 10V, I = 195A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 180 S V = 10V, I = 195A DS D R Gate Resistance 2.3 G 20 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 24V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 160 240 I = 195A g D Q Gate-to-Source Charge 84 V = 12V gs DS nC Q Gate-to-Drain Charge 49 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 76 sync g gd t Turn-On Delay Time 17 V = 16V d(on) DD t Rise Time 190 I = 195A r D ns t Turn-Off Delay Time 83 R = 2.7 d(off) G t Fall Time 120 V = 10V f GS C Input Capacitance 7590 = 0V V iss GS C Output Capacitance 3440 V = 24V oss DS C Reverse Transfer Capacitance 1960 = 1.0MHz, See Fig. 5 rss pF Effective Output Capacitance (Energy Related) 4700 V = 0V, V = 0V to 19V C oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 4490 V = 0V, V = 0V to 19V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 350 S (Body Diode) showing the A Pulsed Source Current integral reverse I 1420 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 195A,V = 0V SD J S GS 46 T = 25C V = 20V J DD t Reverse Recovery Time ns rr 71 T = 125C I = 195A, J F 160 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 430 = 125C T J I Reverse Recovery Current 7.7 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.014mH, R = 25 , I = 195A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 195A, di/dt 450A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-11-11