AUTOMOTIVE GRADE AUIRF1324WL HEXFET Power MOSFET Features Advanced Process Technology D V 24V (BR)DSS Ultra Low On-Resistance R typ. 1.16m DS(on) 50% Lower Lead Resistance max. 1.30m 175C Operating Temperature G Fast Switching I 382A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax S I 240A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically design for automotive applications this Widelead TO- 262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die. This greatly helps in reducing condition losses, achieving higher current levels or enabling a system to run cooler and have improved efficiency. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive and other applications. GD S Gate Drain Source Absolute Maximum Ratings functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. % & ()* Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 382 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 270 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I 1530 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 300 W D C 2.0 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 530 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Peak Diode Recovery 1.3 dv/dt V/ns T Operating Junction and -55 to + 175 J T C Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R C/W JC Junction-to-Case 0.50 HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 24 V V = 0V, I = 250 A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.022 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.16 1.30 V = 10V, I = 195A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A GS(th) DS GS D gfs Forward Transconductance 210 S V = 10V, I = 195A DS D R Internal Gate Resistance 2.4 G I Drain-to-Source Leakage Current 20 V = 24V, V = 0V DSS DS GS A 250 V = 19V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 120 180 I = 195A g D Q Gate-to-Source Charge 58 V =12V gs DS nC Q Gate-to-Drain Mille) Charge 36 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 84 I = 195A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 18 V = 16V d(on) DD t Rise Time 200 I = 195A r D ns t Turn-Off Delay Time 75 R = 2.7 d(off) G t Fall Time 110 V = 10V f GS C Input Capacitance 7630 V = 0V iss GS C Output Capacitance 3390 V = 19V oss DS C Reverse Transfer Capacitance 1960 = 1.0MHz, See Fig.5 pF rss C eff. (ER) 4660 V = 0V, V = 0V to 19V , See Fig.11 Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 4685 V = 0V, V = 0V to 19V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol 382 S (Body Diode) showing the A G I Pulsed Source Current 1530 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 195A, V = 0V SD J S GS t T = 25C V = 20V, Reverse Recovery Time 46 69 rr J R ns T = 125C I = 195A 45 68 J F di/dt = 100A/s Q Reverse Recovery Charge 395 593 T = 25C rr J nC 345 518 T = 125C J I T = 25C Reverse Recovery Current 1.9 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 195A, di/dt 600A/s, V V , T 175C. SD DD (BR)DSS J temperature. Package limitation current is 240A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as