AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology V 40V DSS Dynamic dv/dt Rating R typ. 3.5m DS(on) 175C Operating Temperature max. 4.0m Fast Switching I 162A Fully Avalanche Rated D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax I 75A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description S Specifically designed for Automotive applications, this Stripe S D G Planar design of HEXFET Power MOSFETs utilizes the latest G 2 processing techniques to achieve low on-resistance per silicon TO-262 D Pak AUIRF1404L area. This benefit combined with the fast switching speed and AUIRF1404S ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and G D S reliable device for use in Automotive and a wide variety of other Gate Drain Source applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF1404L TO-262 Tube 50 AUIRF1404L Tube 50 AUIRF1404S 2 AUIRF1404S D -Pak Tape and Reel Left 800 AUIRF1404STRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 162 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 115 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS I Pulsed Drain Current 650 DM P T = 25C Maximum Power Dissipation 3.8 D A W P T = 25C Maximum Power Dissipation 200 D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 519 mJ AS I Avalanche Current 95 A AR E Repetitive Avalanche Energy 20 mJ AR Dv/dt Peak Diode Recovery 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.75 R JC C/W R Junction-to-Ambient ( PCB Mount, steady state) 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-11 AUIRF1404S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.036 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 3.5 4.0 m V = 10V, I = 95A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 106 S V = 25V, I = 60A DS D 20 V = 40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 32V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 160 200 I = 95A g D Q Gate-to-Source Charge 35 nC V = 32V gs DS Q Gate-to-Drain Charge 42 60 V = 10V gd GS t Turn-On Delay Time 17 V = 20V d(on) DD t Rise Time 140 I = 95A r D ns t Turn-Off Delay Time 72 R = 2.5 d(off) G t Fall Time 26 R = 0.21 f D Between lead, L Internal Source Inductance 7.5 nH S and center of die contact C Input Capacitance 7360 V = 0V iss GS C Output Capacitance 1680 V = 25V oss DS C Reverse Transfer Capacitance 240 = 1.0MHz, See Fig. 5 rss pF C Output Capacitance 6630 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 1490 V = 0V, V = 32V = 1.0MHz oss GS DS C Effective Output Capacitance 1540 V = 0V, V = 0V to 32V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 162 S (Body Diode) showing the A Pulsed Source Current integral reverse I 650 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 95A,V = 0V SD J S GS t Reverse Recovery Time 71 110 ns T = 25C ,I = 95A rr J F Q Reverse Recovery Charge 180 270 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Starting T = 25C, L = 0.12mH, R = 25 , I = 95A, V =10V. (See fig. 12) J G AS GS I 95A, di/dt 150A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Use IRF1404 data and test conditions. 2 This is applied to D Pak When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-11-11