PD - 97696A AUTOMOTIVE GRADE AUIRF3504 Features HEXFET Power MOSFET D V 40V (BR)DSS R typ. 7.8 DS(on) m G max 9.2 m S I 87A % D & ( ) * D Description S D % & G TO-220AB AUIRF3504 ( ) G D S & Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Max. Parameter Units Continuous Drain Current, V 10V 87 I T = 25C GS D C Continuous Drain Current, VGS 10V 61 A I T = 100C D C I Pulsed Drain Current 350 DM 143 P T = 25C Power Dissipation W D C 0.95 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS E Single Pulse Avalanche Energy (Thermally Limited) 199 mJ AS E (tested) Single Pulse Avalanche Energy Tested Value 368 AS I Avalanche Current See Fig. 12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR -55 to + 175 T Operating Junction and J T Storage Temperature Range C STG 300 Soldering Temperature, for 10 seconds (1.6mm from case ) 10 lbf in (1.1N m) Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.05 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS RJunction-to-Ambient 62 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.04 V/C Reference to 25C, I = 1mA D R m DS(on) Static Drain-to-Source On-Resistance 7.8 9.2 V = 10V, I = 52A GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 100 A DS GS D gfs Forward Transconductance 46 S V = 10V, I = 52A DS D I Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DSS DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 36 54 I = 52A D Q gs Gate-to-Source Charge 12 18 nC V = 32V DS Q Gate-to-Drain Mille) Charge 13 20 V = 10V gd GS t d(on) Turn-On Delay Time 9.9 V = 20V DD t r Rise Time 61 I = 52A D t Turn-Off Delay Time 24 ns R = 2.7 d(off) G t Fall Time 29 V = 10V f GS L D Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C iss Input Capacitance 2150 V = 0V GS C oss Output Capacitance 600 pF V = 25V DS C Reverse Transfer Capacitance 54 = 1.0MHz, See Fig. 5 rss C oss Output Capacitance 2885 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 526 V = 0V, V = 32V, = 1.0MHz GS DS Effective Output Capacitance C eff. oss 147 V = 0V, V = 0V to 32V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 87 (Body Diode) A showing the G I Pulsed Source Current 350 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 52A, V = 0V SD J S GS t Reverse Recovery Time 65 98 ns T = 25C, I = 52A rr J F di/dt = 100A/ s Q Reverse Recovery Charge 144 216 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on C eff. is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by as C while V is rising from 0 to 80% V . max. junction temperature. (See fig. 11). oss DS DSS Starting T = 25C, L = 0.15mH Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive J Jmax R = 50, I = 52A. (See Figure 12). G AS avalanche performance. I 52A, di/dt 6750A/s, V V , SD DD (BR)DSS This value determined from sample failure population, T 175C. J starting T = 25C, L = 0.15mH, R = 50, I = 52A. J G AS Pulse width 400s duty cycle 2%. R is measured at 2 www.irf.com