AUIRF3805 AUIRF3805S AUTOMOTIVE GRADE AUIRF3805L Features V 55V DSS Advanced Process Technology R typ. DS(on) 2.6m Ultra Low On-Resistance max. 3.3m 175C Operating Temperature I 210A D (Silicon Limited) Fast Switching Repetitive Avalanche Allowed up to Tjmax I 160A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this S S S D HEXFET Power MOSFET utilizes the latest processing G D G G techniques to achieve extremely low on-resistance per silicon 2 area. Additional features of this design are a 175C junction TO-220AB D Pak TO-262 AUIRF3805 operating temperature, fast switching speed and improved AUIRF3805S AUIRF3805L repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in G D S Automotive applications and wide variety of other applications. Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity AUIRF3805 TO-220 Tube 50 AUIRF3805 AUIRF3805L TO-262 Tube 50 AUIRF3805L Tube 50 AUIRF3805S 2 AUIRF3805S D -Pak Tape and Reel Left 800 AUIRF3805STRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 210 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 150 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 160 D C GS I Pulsed Drain Current 890 DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 650 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 940 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.50 R JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W R Junction-to-Ambient 62 JA Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-08-23 AUIRF3805/S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.051 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 2.6 3.3 m V = 10V, I = 75A ** DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 75 S V = 25V, I = 75A** DS D 20 V =55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =55V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 190 290 I = 75A** g D Q Gate-to-Source Charge 52 nC V = 44V gs DS Q Gate-to-Drain Charge 72 V = 10V gd GS t Turn-On Delay Time 150 V = 28V d(on) DD t Rise Time 20 I = 75A** r D ns t Turn-Off Delay Time 93 R = 2.6 d(off) G V = 10V t Fall Time 87 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 7960 V = 0V iss GS C Output Capacitance 1260 V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 630 rss pF C Output Capacitance 4400 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 980 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 1550 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 210 S (Body Diode) showing the A Pulsed Source Current integral reverse I 890 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A**,V = 0V SD J S GS t Reverse Recovery Time 36 54 ns T = 25C ,I = 75A**, V = 28V rr J F DD Q Reverse Recovery Charge 47 71 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) This value determined from sample failure population, starting T = 25C, L = 0.23mH, R = 25, I = 75A, V =10V. J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This is only applied to TO-220AB package. 2 This is applied to D Pak When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T of approximately 90C J TO-220 device will have an Rth value of 0.45C/W. ** All AC and DC test condition based on old Package limitation current = 75A. 2 2017-08-23