AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features V 55V DSS Advanced Process Technology R typ. 2.0m Ultra Low On-Resistance DS(on) 175C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax I 240A D Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 2 TO-263CA 7 Pin D Pak 7 Pin 175C junction operating temperature, fast switching AUIRF3805L-7P AUIRF3805S-7P speed and improved repetitive avalanche rating. These features combine to make this design an extremely G D S efficient and reliable device for use in Automotive Gate Drain Source applications and wide variety of other applications. Standard Pack Base Part Number Package Type Complete Part Number Form Quantity AUIRF3805L-7P TO-263-7PIN Tube 50 AUIRF3805L-7P Tube 50 AUIRF3805S-7P 2 AUIRF3805S-7P D Pak-7PIN Tape and Reel Left 800 AUIRF3805S-7TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 240 D C GS I T = 100C Continuous Drain Current, V 10V 170 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 160 D C GS I Pulsed Drain Current 1000 DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 440 AS mJ E Single Pulse Avalanche Energy Tested Value 680 AS (tested) I Avalanche Current See Fig.12a,12b,15,16 A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 2.3 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 JC R Case-to-Sink, Flat, Greased Surface 0.50 CS C/W Junction-to-Ambient R 62 JA Junction-to-Ambient (PCB Mount, steady state) R 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-09 AUIRF3805S/L-7P Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.05 V/C Reference to 25C, I = 1.0mA D (BR)DSS J R SMD Static Drain-to-Source On-Resistance 2.0 2.6 V = 10V, I = 140A m GS D DS(on) V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 110 S V = 25V, I = 140A DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 130 200 I = 140A g D Q Gate-to-Source Charge 53 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 49 V = 10V gd GS t Turn-On Delay Time 23 V = 28V d(on) DD t Rise Time 130 I = 140A D r ns t Turn-Off Delay Time 80 R = 2.4 d(off) G V = 10V t Fall Time 52 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 7820 V = 0V iss GS C Output Capacitance 1260 V = 25V oss DS = 1.0 MHz, See Fig. 5 C Reverse Transfer Capacitance 610 pF rss C Output Capacitance 4310 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 980 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1540 V = 0V, V = 0V to 44V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 240 S (Body Diode) showing the A Pulsed Source Current integral reverse I 1000 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 140A, V = 0V SD J S GS t Reverse Recovery Time 45 68 ns T = 25C, I = 140A, V = 28V J F DD rr Q Reverse Recovery Charge 35 53 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: 2 Repetitive rating pulse width limited by This is applied to D Pak, when mounted on 1 square PCB max. junction temperature. (See fig. 11). ( FR-4 or G-10 Material ). For recommended footprint and This value determined from sample failure soldering techniques refer to application note AN-994. population starting T = 25C, L=0.043mH, J R is measured at T of approximately 90C. J R = 25 , I = 140A,V =10V. G AS GS Solder mounted on IMS substrate. Limited by T starting T = 25C, L=0.043mH, Pulse width 1.0ms duty cycle 2%. Jmax J R = 25 , I = 140A,V =10V.Part not recommended for use above G AS GS Coss eff. is a fixed capacitance that gives the same this value. charging time as Coss while V is rising from 0 to DS 80% V . DSS 2 2017-10-09