PD - 97697A AUTOMOTIVE GRADE AUIRF3808 HEXFET Power MOSFET Features D V 75V (BR)DSS R typ. 5.9m DS(on) G max 7.0m % S I 140A D & ( )% * + , D Description S D G TO-220AB % & % AUIRF3808 % G D S ( Gate Drain Source ) % & Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Max. Parameter Units I T = 25C Continuous Drain Current, V 10V 140 GS D C I T = 100C Continuous Drain Current, V 10V 97 A GS D C I Pulsed Drain Current 550 DM 330 P T = 25C Power Dissipation W D C 2.2 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS E Single Pulse Avalanche Energy (Thermally Limited) 430 mJ AS I Avalanche Current 82 A AR E Repetitive Avalanche Energy See Fig. 12a, 12b, 15, 16 mJ AR dv/dt Peak Diode Recovery dv/dt 5.5 V/ns -55 to + 175 T Operating Junction and J T Storage Temperature Range C STG 300 Soldering Temperature, for 10 seconds (1.6mm from case ) 10 lbf in (1.1N m) Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.45 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS RJunction-to-Ambient 62 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRF3808 Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.086 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance V = 10V, I = 82A 5.9 7.0 m GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A DS GS D gfs Forward Transconductance 100 S V = 25V, I = 82A DS D I DSS Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DS GS 250 V = 60V, V = 0V, T = 150C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 150 220 I = 82A D Q Gate-to-Source Charge 31 47 nC = 60V gs V DS Q gd Gate-to-Drain Mille) Charge 50 76 V = 10V GS t d(on) Turn-On Delay Time 16 V = 38V DD t r Rise Time 140 I = 82A D t Turn-Off Delay Time 68 ns R = 2.5 d(off) G t Fall Time 120 V = 10V f GS L D D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C iss Input Capacitance 5310 V = 0V GS C oss Output Capacitance 890 pF V = 25V DS C Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 5 rss C oss Output Capacitance 6010 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 570 V = 0V, V = 60V, = 1.0MHz GS DS Effective Output Capacitance C eff. oss 1140 V = 0V, V = 0V to 60V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 140 (Body Diode) A showing the G I Pulsed Source Current 550 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 82A, V = 0V SD J S GS t Reverse Recovery Time 93 140 ns T = 25C, I = 82A rr J F di/dt = 100A/ s Q Reverse Recovery Charge 340 510 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on C eff. is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by as C while V is rising from 0 to 80% V . oss DS DSS max. junction temperature. (See fig. 11). Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax Starting T = 25C, L = 0.130mH J avalanche performance. R = 25 , I = 82A. (See Figure 12). G AS I 82A, di/dt 310A/ s, V V , R is measured at T of approximately 90C. SD DD (BR)DSS J T 175C J Pulse width 400s duty cycle 2%. 2 www.irf.com