AUIRF4905S AUTOMOTIVE GRADE AUIRF4905L HEXFET Power MOSFET Features V -55V Advanced Planar Technology DSS P-Channel MOSFET R max. DS(on) 20m Low On-Resistance I -70A D (Silicon Limited) 150C Operating Temperature Fast Switching I -42A D (Package Limited) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * S S G D Description G Specifically designed for Automotive applications, this cellular design of 2 TO-262 D Pak HEXFET Power MOSFETs utilizes the latest processing techniques to AUIRF4905L AUIRF4905S achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power G D S MOSFETs are well known for, provides the designer with an extremely Gate Drain Source efficient and reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF4905L TO-262 Tube 50 AUIRF4905L Tube 50 AUIRF4905S 2 AUIRF4905S D -Pak Tape and Reel Left 800 AUIRF4905STRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) -70 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) -44 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) -42 D C GS I Pulsed Drain Current -280 DM P T = 25C Maximum Power Dissipation 170 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 140 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 790 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.75 R JC C/W R Junction-to-Ambient ( PCB Mount, steady state) 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-13 AUIRF4905S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient -0.054 V/C Reference to 25C, I = -1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 20 m V = -10V, I = -42A DS(on) GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D gfs Forward Trans conductance 19 S V = -25V, I = -42A DS D -25 V = -55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -44V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage -100 V = -20V GSS GS nA Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 120 180 I = -42A g D Q Gate-to-Source Charge 32 nC V = -44V gs DS Q Gate-to-Drain Charge 53 V = -10V gd GS t Turn-On Delay Time 20 V = -28V d(on) DD t Rise Time 99 I = -42A r D ns t Turn-Off Delay Time 51 R = 2.6 d(off) G t Fall Time 64 V = -10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 3500 V = 0V iss GS C Output Capacitance 1250 V = -25V oss DS C Reverse Transfer Capacitance 450 = 1.0MHz rss pF C Output Capacitance 4620 V = 0V,V = -1.0V = 1.0MHz oss GS DS C Output Capacitance 940 V = 0V,V = -44V = 1.0MHz oss GS DS C Effective Output Capacitance 1530 V = 0V, V = 0V to -44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -42 S (Body Diode) showing the A Pulsed Source Current integral reverse I -280 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.3 V T = 25C,I = -42A,V = 0V SD J S GS t Reverse Recovery Time 61 92 ns T = 25C ,I = -42A , V = -28V rr J F DD Q Reverse Recovery Charge 150 220 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) Limited by T starting T = 25C, L = 0.16mH, R = 25 , I = -42A, V =-10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L = 0.08mH, R = 25, I = 66A, V =10V. J G AS GS 2 This is applied to D Pak, When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T of approximately 90C J 2 2015-11-13