AUTOMOTIVE GRADE Features D V -150V (BR)DSS R max. 0.29 DS(on) G I -13A S D % & ( * D Description Specifically designed for Automotive applications, this cellular design of HEXFET Power MOSFETs S D utilizes the latest processing techniques to achieve G low on-resistance per silicon area. This benefit com- TO-220AB bined with the fast switching speed and ruggedized AUIRF6215 device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely GD S efficient and reliable device for use in Automotive and Gate Drain Source a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Max. Parameter Units Continuous Drain Current, V 10V -13 I T = 25C GS D C I T = 100C Continuous Drain Current, V 10V -9.0 A GS D C -44 I Pulsed Drain Current DM 110 P T = 25C Power Dissipation W D C 0.71 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS E Single Pulse Avalanche Energy (Thermally Limited) 310 mJ AS I Avalanche Current -6.6 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG 300 Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.4 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS RJunction-to-Ambient 62 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -150 V V = 0V, I = -250A GS D V / T Breakdown Voltage Temp. Coefficient -0.20 V/C Reference to 25C, I = -1mA (BR)DSS J D R DS(on) Static Drain-to-Source On-Resistance 0.29 V = -10V, I = -6.6A ,T =25C GS D J 0.58 V = -10V, I = -6.6A ,T =150C GS D J V GS(th) Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A DS GS D gfs Forward Transconductance 3.6 S V = -50V, I = -6.6A DS D I DSS Drain-to-Source Leakage Current -25 A V = -150V, V = 0V DS GS -250 V = -120V, V = 0V, T = 150C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS ge -100 = -20V Gate-to-Source Reverse Leaka V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 66 I = -6.6A D Q gs Gate-to-Source Charge 8.1 nC V = -120V DS Q Gate-to-Drain Mille) Charge 35 V = -10V, See Fig. 6 & 13 gd GS t d(on) Turn-On Delay Time 14 V = -75V DD t r Rise Time 36 I = -6.6A D t d(off) Turn-Off Delay Time 53 ns R = 6.8 G t Fall Time 37 R = 12 , See Fig. 10 f D L D Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 860 V = 0V iss GS C Output Capacitance 220 pF V = -25V oss DS C rss Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 5 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current -13 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current -44 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage -1.6 V T = 25C, I = -6.6A, V = 0V SD J S GS t Reverse Recovery Time 160 240 ns T = 25C, I = -6.6A rr J F di/dt = 100A/s Q Reverse Recovery Charge 1.2 1.7 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on I / 0* / 0 2 * 3 3 * SD % 4 () 5 6 2 7 % & ()* + & , -* & * . & / 0 1 R is measured at TJ approximately 90C.