AUTOMOTIVE GRADE AUIRF7103Q V Features DSS 1 8 S1 D1 50V Advanced Planar Technology 2 7 G1 D1 R max. Dual N Channel MOSFET 3 DS(on) 6 S2 D2 130m Low On-Resistance 4 5 G2 D2 I Logic Level Gate Drive D 3.0A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * SO-8 Description AUIRF7103Q Specifically designed for Automotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon G D S area. This benefit combined with the fast switching speed and Gate Drain Source ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF7103Q SO-8 Tape and Reel 4000 AUIRF7103QTR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 4.5V 3.0 D A GS I T = 70C Continuous Drain Current, V 4.5V 2.5 A D A GS I Pulsed Drain Current 25 DM P T = 25C Maximum Power Dissipation 2.4 W D A Linear Derating Factor 16 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 22 AS mJ I Avalanche Current See Fig.19,20, 16b, 16c A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 12 V/ns T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Drain Lead 20 R JL C/W Junction-to-Ambient 62.5 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7103Q Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 50 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D 130 V = 10V, I = 3.0A GS D R Static Drain-to-Source On-Resistance m DS(on) 200 V = 4.5V, I = 1.5A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 3.4 S V = 15V, I = 3.0A DS D 2.0 V =40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 25 V = 40V,V = 0V,T =55C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 10 15 I = 2.0A g D Q Gate-to-Source Charge 1.2 nC V = 40V gs DS Q Gate-to-Drain Charge 2.8 V = 10V gd GS t Turn-On Delay Time 5.1 V = 25V d(on) DD t Rise Time 1.7 I = 1.0A r D ns t Turn-Off Delay Time 15 R = 6.0 d(off) G t Fall Time 2.3 R = 25 f D C Input Capacitance 255 V = 0V iss GS C Output Capacitance 69 pF V = 25V oss DS C Reverse Transfer Capacitance 29 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 3.0 S (Body Diode) showing the A Pulsed Source Current integral reverse I 12 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C,I = 1.5A,V = 0V SD J S GS t Reverse Recovery Time 35 53 ns T = 25C ,I = 1.5A, rr J F Q Reverse Recovery Charge 45 67 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%. Surface mounted on 1 in square Cu board. Starting T = 25C, L = 4.9mH, R = 25 , I = 3.0A. (See Fig. 12) J G AS I 2.0A, di/dt 155A/s, V V , T 175C. SD DD (BR)DSS J Limited by T , see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance. Jmax 2 2015-9-30