AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance 2 7 G1 D1 V 30V -30V DSS Logic Level Gate Drive 3 6 S2 D2 Dual N and P Channel MOSFET R max. 0.05 0.10 4 DS(on) 5 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top View I 4.7A -3.5A D Fast Switching Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest SO-8 processing techniques to achieve low on-resistance per silicon AUIRF7309Q area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are G D S well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of Gate Drain Source other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF7309Q SO-8 Tape and Reel 4000 AUIRF7309QTR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Symbol Parameter Units N-Channel P-Channel I T = 25C 10 Sec. Pulsed Drain Current, V 10V 4.7 D A GS -3.5 I T = 25C Continuous Drain Current, V 10V 4.0 D A GS -3.0 A I T = 70C Continuous Drain Current, V 10V 3.2 D A GS -2.4 I Pulsed Drain Current 16 DM -12 P T = 25C Maximum Power Dissipation W D A 1.4 Linear Derating Factor W/C 0.011 V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 6.9 V/ns -6.0 T Operating Junction and J -55 to + 150 C T Storage Temperature Range STG Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Ambient ( PCB Mount, steady state) 90 C/W JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7309Q Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions N-Ch 30 V = 0V, I = 250A GS D V Drain-to-Source Breakdown Voltage V (BR)DSS P-Ch -30 V = 0V, I = -250A GS D N-Ch 0.032 Reference to 25C, I = 1mA D V / T Breakdown Voltage Temp. Coefficient V/C (BR)DSS J P-Ch -0.037 Reference to 25C, I = -1mA D 0.050 V = 10V, I = 2.4A GS D N-Ch 0.080 V = 4.5V, I = 2.0A GS D R Static Drain-to-Source On-Resistance DS(on) 0.10 V = -10V, I = -1.8A GS D P-Ch 0.16 V = -4.5V, I = -1.5A GS D N-Ch 1.0 3.0 V = V , I = 250A DS GS D V Gate Threshold Voltage V GS(th) P-Ch -1.0 -3.0 V = V , I = -250A DS GS D N-Ch 5.2 V = 15V, I = 2.4A DS D gfs Forward Trans conductance S P-Ch 2.5 V = -24V, I = -1.8A DS D N-Ch 1.0 V =24V, V = 0V DS GS = -24V,V = 0V P-Ch -1.0 V DS GS I Drain-to-Source Leakage Current A DSS N-Ch 25 V =24V, V = 0V ,T =125C DS GS J P-Ch -25 V = -24V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage N-P 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage N-P 100 V = 20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J N-Ch 25 N-Channel Q Total Gate Charge g P-Ch 25 I = 2.6A, V = 16V,V = 4.5V D DS GS N-Ch 2.9 Q Gate-to-Source Charge nC gs P-Ch 2.9 P-Channel N-Ch 7.9 I = -2.2A,V = -16V,V = -4.5V D DS GS Q Gate-to-Drain Charge gd P-Ch 9.0 N-Ch 6.8 N-Channel t Turn-On Delay Time d(on) P-Ch 11 V = 10V,I = 2.6A,R = 6.0 DD D G N-Ch 21 R = 3.8 D t Rise Time r P-Ch 17 ns N-Ch 22 P-Channel t Turn-Off Delay Time d(off) P-Ch 25 V = -10V,I = -2.2A,R = 6.0 DD D G N-Ch 7.7 R = 4.5 D t Fall Time f P-Ch 18 L Internal Drain Inductance N-P 4.0 Between lead, 6mm(0.25n) from D nH L Internal Source Inductance N-P 6.0 package and center of die contact S N-Ch 520 N-Channel C Input Capacitance iss P-Ch 440 V = 0V,V = 15V, = 1.0MHz GS DS N-Ch 180 C Output Capacitance pF oss P-Ch 200 P-Channel N-Ch 72 V = 0V,V = -15V, = 1.0MHz GS DS C Reverse Transfer Capacitance rss P-Ch 93 Diode Characteristics Parameter Min. Typ. Max. Units Conditions N-Ch 1.8 I Continuous Source Current (Body Diode) S P-Ch -1.8 A Pulsed Source Current N-Ch 16 I SM (Body Diode) P-Ch -12 N-Ch 1.0 T = 25C,I = 1.8A,V = 0V J S GS V Diode Forward Voltage V SD P-Ch -1.0 T = 25C,I = -1.8A,V = 0V J S GS N-Ch 47 71 N-Channel t Reverse Recovery Time ns rr P-Ch 53 80 T = 25C ,I = 2.6A, di/dt = 100A/s J F N-Ch 56 84 P-Channel Q Reverse Recovery Charge nC rr P-Ch 66 99 T = 25C,I = -2.2A, di/dt = 100A/s J F t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See Fig. 23) N-Channel I 2.4A, di/dt 73A/s, V V , T 150C. SD DD (BR)DSS J P-Channel I -1.8A, di/dt 90A/s, V V , T 150C SD DD (BR)DSS J Pulse width 300s duty cycle 2%. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2015-9-30