AUTOMOTIVE GRADE AUIRF7341Q V Features 1 DSS 8 55V S1 D1 Advanced Planar Technology 2 7 G1 D1 R typ. DS(on) 0.043 3 6 Ultra Low On-Resistance S2 D2 4 5 max. Logic Level Gate Drive G2 D2 0.050 Dual N Channel MOSFET Top View I D 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, these HEXFET Power SO-8 MOSFET s in a Dual SO-8 package utilize the lastest processing AUIRF7341Q techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET s are a 175C junction operating temperature, fast switching G D S speed and improved repetitive avalanche rating. These benefits combine Gate Drain Source to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF7341Q SO-8 Tape and Reel 4000 AUIRF7341QTR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units V Drain-Source Voltage 55 DS V I T = 25C Continuous Drain Current, V 10V 5.1 D A GS I T = 70C Continuous Drain Current, V 10V 4.2 A D A GS I Pulsed Drain Current 42 DM P T = 25C Maximum Power Dissipation 2.4 D A W P T = 70C Maximum Power Dissipation 1.7 D A Linear Derating Factor 16 mW/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 140 mJ AS I Avalanche Current 5.1 A AR E Repetitive Avalanche Energy See Fig.17, 18, 15a, 15b mJ AR T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 62.5 R C/W JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7341Q Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D 0.043 0.050 V = 10V, I = 5.1A GS D R Static Drain-to-Source On-Resistance DS(on) 0.056 0.065 V = 4.5V, I = 4.42A GS D V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 10.4 S V = 10V, I = 5.2A DS D 2.0 V =44V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 25 V = 44V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 29 44 I =5.2A g D Q Gate-to-Source Charge 2.9 4.4 nC V = 44V gs DS Q Gate-to-Drain Charge 7.3 11 V = 10V gd GS t Turn-On Delay Time 9.2 V = 28V d(on) DD t Rise Time 7.7 I = 1.0A r D ns t Turn-Off Delay Time 31 R = 6.0 d(off) G t Fall Time 12.5 V = 10V f GS C Input Capacitance 780 V = 0V iss GS C Output Capacitance 190 pF V = 25V oss DS C Reverse Transfer Capacitance 66 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 2.4 S (Body Diode) showing the A Pulsed Source Current integral reverse I 42 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C,I = 2.6A,V = 0V SD J S GS t Reverse Recovery Time 51 77 ns T = 25C ,I = 2.6A, rr J F Q Reverse Recovery Charge 76 114 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. V =25V, Starting T = 25C, L = 10.7mH, R = 25 , I = 5.2A. DD J G AS Pulse width 300s duty cycle 2%. Surface mounted FR-4 board, t 10sec. 2 2015-9-30