AUTOMOTIVE GRADE AUIRF7732S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V 40V (BR)DSS Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications R typ. 5.5m DS(on) Exceptionally Small Footprint and Low Profile max. 6.95m High Power Density I 55A D (Silicon Limited) Low Parasitic Parameters Q 30nC Dual Sided Cooling g (typical) 175C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free S Automotive Qualified * DD G S SC DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description The AUIRF7732S2 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRF7732S2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRF7732S2 DirectFET Small Can AUIRF7732S2TR Tape and Reel 4800 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units V Drain-to-Source Voltage 40 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 55 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 39 D C GS A I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 14 D A GS I Pulsed Drain Current 220 DM P T = 25C Power Dissipation 41 D C W P T = 25C Power Dissipation 2.5 D A E Single Pulse Avalanche Energy (Thermally Limited) 45 AS mJ E (Tested) Single Pulse Avalanche Energy 100 AS I Avalanche Current A AR See Fig. 16, 17, 18a, 18b E Repetitive Avalanche Energy mJ AR T Peak Soldering Temperature 270 P T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-14 AUIRF7732S2TR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 60 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 R C/W JA Junction-to-Can 3.7 R J-Can R Junction-to-PCB Mounted 1.0 J-PCB Linear Derating Factor 0.27 W/C Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.03 V/C Reference to 25C, I = 1.0mA V / T D (BR)DSS J 5.5 6.95 V = 10V, I = 33A R Static Drain-to-Source On-Resistance m GS D DS(on) V Gate Threshold Voltage 2.0 4.0 V GS(th) V = V , I = 50A DS GS D V / T Gate Threshold Voltage Coefficient -8.1 mV/C GS(th) J gfs Forward Transconductance 52 S V = 10V, I = 33A DS D R Internal Gate Resistance 0.7 G 5.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 30 45 V = 20V g DS Q Gate-to-Source Charge 5.1 V = 10V GS gs1 I = 33A Q Gate-to-Source Charge 2.8 gs2 D nC Q Gate-to-Drain Mille) Charge 9.7 See Fig. 11 gd Q Gate Charge Overdrive 12 godr Q Switch Charge (Q + Q) 12.5 sw gs2 gd Q Output Charge 16 V = 16V, V = 0V oss nC DS GS t Turn-On Delay Time 9.6 V = 20V d(on) DD t Rise Time 25 I = 33A r D ns t Turn-Off Delay Time 24 R = 6.8 d(off) G t Fall Time 22 V = 4.5V GS f C Input Capacitance 1700 V = 0V iss GS C Output Capacitance 405 V = 25V DS oss C Reverse Transfer Capacitance 200 = 1.0 MHz rss pF C Output Capacitance 1460 V = 0V, V = 1.0V, = 1.0 MHz oss GS DS C Output Capacitance 360 V = 0V, V = 32V, = 1.0 MHz oss GS DS C eff. Effective Output Capacitance 540 V = 0V, V = 0V to 32V oss GS DS Notes through are on page 3 2 2015-12-14