AUTOMOTIVE GRADE AUIRFN7107 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance V 75V DSS 175C Operating Temperature Fast Switching R max DS(on) Repetitive Avalanche Allowed up to Tjmax 8.5m ( V = 10V) GS Lead-Free, RoHS Compliant Automotive Qualified * Q 51nC G (typical) I Description D 75A ( T = 25C) C (Bottom) Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of PQFN 5X6 mm other applications. G D S Applications Gate Drain Source Injection Heavy Loads DC-DC Converter Standard Pack Base Part Number Package Type Complete Part Number Form Quantity AUIRFN7107 PQFN 5mm x 6mm Tape and Reel 4000 AUIRFN7107TR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units V Drain-to-Source Voltage 75 V DS I T = 25C Continuous Drain Current, V 10V 14 D A GS I T = 70C Continuous Drain Current, V 10V 12 D A GS I T = 25C Continuous Drain Current, V 10V 75 D C(Bottom) GS A I T = 100C Continuous Drain Current, V 10V 53 D C(Bottom) GS I Pulsed Drain Current 300 DM P T = 25C Power Dissipation 4.4 D A W P T = 25C Power Dissipation 125 D C(Bottom) Linear Derating Factor 0.029 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 123 mJ AS I Avalanche Current 45 A AR T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-12 AUIRFN7107 Thermal Resistance Symbol Parameter Typ. Max. Units (Bottom) Junction-to-Case 1.2 R JC Junction-to-Case 27 R (Top) JC C/W Junction-to-Ambient 34 R JA Junction-to-Ambient 22 R (<10s) JA Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.074 V/C Reference to 25C, I = 1.0mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 6.9 8.5 V = 10V, I = 45A m GS D DS(on) V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100A GS(th) DS GS D R Internal Gate Resistance 0.82 G gfs Forward Transconductance 73 S V = 25V, I = 45A DS D 20 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 51 77 I = 45A g D Q Gate-to-Source Charge 15 V = 38V gs DS nC Q Gate-to-Drain Mille) Charge 14 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 37 I = 45A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 8.0 V = 75V d(on) DD t Rise Time 12 I = 45A r D ns t Turn-Off Delay Time 19 R = 1.8 d(off) G t Fall Time 7.0 V = 10V f GS C Input Capacitance 3001 V = 0V iss GS V = 25V C Output Capacitance 371 pF oss DS C Reverse Transfer Capacitance 151 = 1.0 MHz rss Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 75 A S (Body Diode) showing the Pulsed Source Current integral reverse I 300 A SM (Body Diode) p-n junction diode. V Diode Forward Voltage 0.85 1.3 V T = 25C, I = 45A, V = 0V SD J S GS t Reverse Recovery Time 28 ns T = 25C, I = 45A, V = 38V rr J F DD Q Reverse Recovery Charge 145 nC di/dt = 500A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L =0.12mH, R = 50 , I = 45A. J G AS Pulse width 400s duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: