AUIRFP4568 AUTOMOTIVE GRADE AUIRFP4568-E Features V 150V DSS Advanced Planar Technology R typ. 4.8m DS(on) Ultra Low On-Resistance Dynamic dv/dt Rating max. 5.9m 175C Operating Temperature I 171A D Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description S S D Specifically designed for Automotive applications, this D G G HEXFET Power MOSFET utilizes the latest processing TO-247AC Long Lead TO-247AC techniques to achieve extremely low on-resistance per silicon AUIRFP4568 AUIRFP4568-E area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved G D S repetitive avalanche rating . These features combine to make Gate Drain Source this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFP4568 TO-247AC Tube 25 AUIRFP4568 AUIRFP4568-E Long Lead TO-247AC Tube 25 AUIRFP4568-E Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 171 D C GS A I T = 100C Continuous Drain Current, V 10V 121 D C GS I Pulsed Drain Current 684 DM P T = 25C Maximum Power Dissipation 517 W D C Linear Derating Factor 3.45 W/C V Gate-to-Source Voltage 30 V GS E Single Pulse Avalanche Energy (Thermally Limited) 763 mJ AS I Avalanche Current See Fig.14,15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 18.5 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.29 R JC Case-to-Sink, Flat, Greased Surface 0.24 R C/W CS R Junction-to-Ambient 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2019-04-29 AUIRFP4568/AUIRFP4568-E Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.17 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 4.8 5.9 m V = 10V, I = 103A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 162 S V = 50V, I = 103A DS D R Internal Gate Resistance 1.0 G 20 V =150 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =150V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 151 227 I = 103A g D Q Gate-to-Source Charge 52 V = 75V gs DS nC Q Gate-to-Drain Charge 55 V = 10V gd GS Q Total Gate Charge Sync. (Q Q) 96 sync g gd t Turn-On Delay Time 27 V = 98V d(on) DD t Rise Time 119 I = 103A r D ns t Turn-Off Delay Time 47 R = 1.0 d(off) G t Fall Time 84 V = 10V f GS C Input Capacitance 10470 V = 0V iss GS C Output Capacitance 977 V = 50V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 203 rss pF V =0V, V =0V to 120V GS DS C (ER) Effective Output Capacitance (Energy Related) 897 oss eff. (see fig.11) C (TR) Effective Output Capacitance (Time Related) 1272 V = 0V, V = 0V to 120V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 171 S (Body Diode) showing the A Pulsed Source Current integral reverse I 684 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 103A,V = 0V SD J S GS 110 T = 25C J t Reverse Recovery Time ns rr V =100V R 133 T = 125C J I = 103A 515 T = 25C J F Q Reverse Recovery Charge nC rr 758 T = 125C J di/dt = 100A/s I Reverse Recovery Current 8.8 A T = 25C RRM J Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.144mH, R = 25 , I = 103A, V =10V. Part not recommended for use above this value. Jmax J G AS GS I 103A, di/dt 360A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while VDS is rising from 0 to 80% V . oss oss DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T of approximately 90C. J 2 2019-04-29