AUTOMOTIVE GRADE AUIRFR3806 Features HEXFET Power MOSFET Advanced Process Technology V 60V DSS Ultra Low On-Resistance R typ. 12.6m DS(on) Dynamic dV/dT Rating max. 15.8m 175C Operating Temperature I 43A D Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed for Automotive applications, this HEXFET G Power MOSFET utilizes the latest processing techniques to D-Pak achieve extremely low on-resistance per silicon area. Additional AUIRFR3806 features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient G D S and reliable device for use in Automotive applications and a wide Gate Drain Source variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 AUIRFR3806 AUIRFR3806 D-Pak Tape and Reel Left 3000 AUIRFR3806TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 43 D C GS I T = 100C Continuous Drain Current, V 10V 31 A D C GS I Pulsed Drain Current 170 DM P T = 25C Maximum Power Dissipation 71 W D C Linear Derating Factor 0.47 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 73 mJ AS I Avalanche Current 25 A AR E Repetitive Avalanche Energy 7.1 mJ AR dv/dt Pead Diode Recovery dv/dt 24 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 2.12 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-23 AUIRFR3806 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.075 V/C Reference to 25C, I = 5mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 12.6 15.8 mV = 10V, I = 25A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 50A GS(th) DS GS D gfs Forward Trans conductance 41 S V = 10V, I = 25A DS D R Internal Gate Resistance 0.79 G(Int) 20 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 22 30 I = 25A g D Q Gate-to-Source Charge 5.0 V = 30V gs DS nC Q Gate-to-Drain Charge 6.3 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 28.3 sync g gd t Turn-On Delay Time 6.3 V = 39V d(on) DD t Rise Time 40 I = 25A r D ns t Turn-Off Delay Time 49 R = 20 d(off) G t Fall Time 47 V = 10V f GS C Input Capacitance 1150 V = 0V iss GS C Output Capacitance 130 V = 50V oss DS C Reverse Transfer Capacitance 67 pF = 1.0MHz rss C (ER) Effective Output Capacitance (Energy Related) 190 V = 0V, V = 0V to 48V oss eff. GS DS C (TR) Effective Output Capacitance (Time Related) 230 V = 0V, V = 0V to 48V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 43 S (Body Diode) showing the A Pulsed Source Current integral reverse I 170 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 25A,V = 0V SD J S GS t Reverse Recovery Time 22 33 T = 25C rr J ns 26 39 T = 125C V = 51V, J R 17 26 T = 25C Q Reverse Recovery Charge I = 25A rr J F nC 24 36 T = 125C di/dt = 100A/s J 1.4 A T = 25C J Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.23mH, R = 25 , I = 25A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS I 25A, di/dt 1580A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C . (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss eff oss DS DSS C . (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss eff oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-11-23