AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features V 250V DSS Advanced Process Technology R typ. 275m DS(on) Low On-Resistance max. 345m 175C Operating Temperature Fast Switching I 9.3A D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * D S S Description D G G Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to D-Pak I-Pak AUIRFR4292 AUIRFU4292 achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . G D S These features combine to make this design an extremely efficient Gate Drain Source and reliable device for use in Automotive applications and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Note Form Quantity AUIRFU4292 I-Pak Tube 75 AUIRFU4292 Tube 75 AUIRFR4292 Tape and Reel Left 3000 AUIRFR4292TRL AUIRFR4292 D-Pak Tape and Reel Right 3000 AUIRFR4292TRR EOL notice 530 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 9.3 D C GS I T = 100C Continuous Drain Current, V 10V 6.6 A D C GS I Pulsed Drain Current 40 DM P T = 25C Maximum Power Dissipation 100 W D C Linear Derating Factor 0.67 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 130 AS mJ E (Tested) Single Pulse Avalanche Energy Tested Value 97 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.5 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-12 AUIRFR/U4292 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 250 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.31 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 275 345 m V = 10V, I = 5.6A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 50A GS(th) DS GS D gfs Forward Trans conductance 6.2 S V = 50V, I = 5.6A DS D 20 V = 250 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 250V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 13 20 I = 5.6A g D Q Gate-to-Source Charge 4.7 nC V = 125V gs DS Q Gate-to-Drain Charge 4.8 V = 10V gd GS t Turn-On Delay Time 11 V = 250V d(on) DD t Rise Time 15 I = 5.6A r D ns t Turn-Off Delay Time 16 R = 15 d(off) G t Fall Time 8.4 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 705 V = 0V iss GS C Output Capacitance 71 V = 25V oss DS C Reverse Transfer Capacitance 20 = 1.0MHz rss pF C Output Capacitance 600 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 26 V = 0V, V = 200V = 1.0MHz oss GS DS C Effective Output Capacitance 65 V = 0V, V = 0V to 200V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 9.3 S (Body Diode) showing the A Pulsed Source Current integral reverse I 40 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 5.6A,V = 0V SD J S GS t Reverse Recovery Time 110 165 ns T = 25C ,I = 5.6A, V = 125V rr J F DD Q Reverse Recovery Charge 390 585 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 8.1mH, R = 50 , I = 5.6A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population. starting T = 25C, L = 8.1mH, R = 50 , I = 5.6A, V =10V. J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C J 2 2015-10-12