AUIRFR5305 AUTOMOTIVE GRADE AUIRFU5305 Features V -55V DSS Advanced Planar Technology Low On-Resistance R max. 0.065 DS(on) Dynamic dv/dt Rating I -31A D 175C Operating Temperature Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Automotive Qualified * S S D G G Description D-Pak I-Pak Specifically designed for Automotive applications, this Cellular AUIRFR5305 AUIRFU5305 Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon G D S area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are Gate Drain Source well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFU5305 I-Pak Tube 75 AUIRFU5305 Tube 75 AUIRFR5305 AUIRFR5305 D-Pak Tape and Reel Left 3000 AUIRFR5305TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -31 D C GS I T = 100C Continuous Drain Current, V -10V -22 A D C GS I Pulsed Drain Current -110 DM P T = 25C Maximum Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 280 AS mJ I Avalanche Current -16 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.4 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-12 AUIRFR/U5305 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient -0.034 V/C Reference to 25C, I = -1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.065 V = -10V, I = -16A DS(on) GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D gfs Forward Trans conductance 8.0 S V = -25V, I = -16A DS D -25 V = -55 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -44V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 63 I = -16A g D Q Gate-to-Source Charge 13 nC V = -44V gs DS Q Gate-to-Drain Charge 29 V = -10V, See Fig 6 and 13 gd GS t Turn-On Delay Time 14 V = -28V d(on) DD t Rise Time 66 I = -16A r D ns t Turn-Off Delay Time 39 R = 6.8 d(off) G t Fall Time 63 R = 1.6 See Fig 10 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 1200 V = 0V iss GS C Output Capacitance 520 pF V = -25V oss DS C Reverse Transfer Capacitance 250 = 1.0MHz, See Fig. 5 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -31 S (Body Diode) showing the A Pulsed Source Current integral reverse I -110 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.3 V T = 25C,I = -16A,V = 0V SD J S GS t Reverse Recovery Time 71 110 ns T = 25C ,I = -16A rr J F Q Reverse Recovery Charge 170 250 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) V = -25V, starting T = 25C, L = 2.1mH, R = 25 , I = -16A. (See Fig.12) DD J G AS I -16A, di/dt -280A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. This is applied for I-PAK, L of D-PAK is measured between lead and center of die contact . S Uses IRF5305 data and test conditions. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 Uses typical socket mount. 2 2015-10-12