AUIRFR8405 AUTOMOTIVE GRADE AUIRFU8405 Features V 40V DSS Advanced Process Technology R typ. 1.65m DS(on) New Ultra Low On-Resistance max. 1.98m 175C Operating Temperature I 211A D (Silicon Limited) Fast Switching I 100A D (Package Limited) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * D Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per S S D silicon area. Additional features of this design are a 175C junction operating G G temperature, fast switching speed and improved repetitive avalanche rating. These D-Pak I-Pak features combine to make this design an extremely efficient and reliable device for AUIRFU8405 AUIRFR8405 use in Automotive applications and wide variety of other applications. Applications Electric Power Steering (EPS) G D S Battery Switch Gate Drain Source Start/Stop Micro Hybrid Heavy Loads DC-DC Converter Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFU8405 I-Pak Tube 75 AUIRFU8405 Tube 75 AUIRFR8405 AUIRFR8405 D-Pak Tape and Reel Left 3000 AUIRFR8405TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 211 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 150 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 100 D C GS I Pulsed Drain Current 804 DM P T = 25C Maximum Power Dissipation 163 W D C Linear Derating Factor 1.1 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy (Thermally Limited) 208 AS mJ E (tested) Single Pulse Avalanche Energy (Tested Limited) 256 AS I Avalanche Current See Fig. 14, 15, 24a, 24b A AR E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.92 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA R Junction-to-Ambient 110 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-12 AUIRFR/U8405 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.03 V/C Reference to 25C, I = 5mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 1.65 1.98 m V = 10V, I = 90A** DS(on) GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.3 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J gfs Forward Trans conductance 294 S V = 10V, I = 90A** DS D Q Total Gate Charge 103 155 I = 90A** g D Q Gate-to-Source Charge 26 V = 20V gs DS nC Q Gate-to-Drain Charge 38 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 65 sync g gd t Turn-On Delay Time 12 V = 26V d(on) DD t Rise Time 80 I = 90A** r D ns t Turn-Off Delay Time 51 R = 2.7 d(off) G t Fall Time 51 V = 10V f GS C Input Capacitance 5171 V = 0V iss GS C Output Capacitance 770 V = 25V oss DS pF C Reverse Transfer Capacitance 523 = 1.0MHz, See Fig. 5 rss C (ER) Effective Output Capacitance (Energy Related) 939 V = 0V, V = 0V to 32V oss eff. GS DS C (TR) Effective Output Capacitance (Time Related) 1054 V = 0V, V = 0V to 32V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 211 S (Body Diode) showing the A Pulsed Source Current integral reverse I 804 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 0.9 1.3 V T = 25C,I = 90A** ,V = 0V SD J S GS dv/dt Peak Diode Recovery dv/dt 2.1 V/ns T = 175C,I = 90A** ,V = 40V J S DS t Reverse Recovery Time 28 T = 25C rr J V = 34V, ns R 29 T = 125C J I = 90A** F Q Reverse Recovery Charge 19 T = 25C rr J di/dt = 100A/s nC 20 T = 125C J I Reverse Recovery Current 1.1 A T = 25C RRM J Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.051mH, R = 50 , I = 90A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS I 90A, di/dt 1304A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C . (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss eff oss DS DSS C . (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss eff oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J Pulse drain current is limited by source bonding technology. ** All AC and DC test condition based on old Package limitation current = 90A. 2 2015-10-12