AUIRFS3004 AUTOMOTIVE GRADE AUIRFSL3004 HEXFET Power MOSFET Features V 40V DSS Advanced Process Technology R typ. 1.4m DS(on) Ultra Low On-Resistance max. 175C Operating Temperature 1.75m Fast Switching I 340A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax I 195A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET S S Power MOSFET utilizes the latest processing techniques to achieve D G G extremely low on-resistance per silicon area. Additional features of 2 TO-262 D Pak this design are a 175C junction operating temperature, fast switching AUIRFSL3004 speed and improved repetitive avalanche rating. These features AUIRFS3004 combine to make this design an extremely efficient and reliable device G D S for use in Automotive applications and a wide variety of other Gate Drain Source applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFSL3004 TO-262 Tube 50 AUIRFSL3004 Tube 50 AUIRFS3004 2 AUIRFS3004 D -Pak Tape and Reel Left 800 AUIRFS3004TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 340 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 240 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I Pulsed Drain Current 1310 DM P T = 25C Maximum Power Dissipation 380 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery 4.4 V/ns E Single Pulse Avalanche Energy (Thermally Limited) 300 mJ AS I Avalanche Current A AR See Fig.14,15, 22a, 22b E Repetitive Avalanche Energy mJ AR T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.40 R JC C/W 2 Junction-to-Ambient (PCB Mount), D Pak 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-11 AUIRFS/SL3004 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.037 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.4 1.75 m V = 10V, I = 195A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 1170 S V = 10V, I = 195A DS D 20 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 40V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.2 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 160 240 I = 187A g D Q Gate-to-Source Charge 40 V = 20V gs DS nC Q Gate-to-Drain Charge 68 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 92 sync g gd t Turn-On Delay Time 23 V = 26V d(on) DD t Rise Time 220 I = 195A r D ns t Turn-Off Delay Time 90 R = 2.7 d(off) G t Fall Time 130 V = 10V f GS C Input Capacitance 9200 V = 0V iss GS C Output Capacitance 2020 V = 25V oss DS C Reverse Transfer Capacitance 1340 = 1.0MHz, See Fig. 5 rss pF C Effective Output Capacitance (Energy Related) 2440 V = 0V, V = 0V to 32V oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 2690 V = 0V, V = 0V to 32V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 340 S (Body Diode) showing the A Pulsed Source Current integral reverse I 1310 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 195A,V = 0V SD J S GS 27 T = 25C V = 34V J DD t Reverse Recovery Time ns rr 31 T = 125C I = 195A, J F 18 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 41 T = 125C J I Reverse Recovery Current 1.2 A T = 25C RRM J Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.016mH, R = 25 , I = 195A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 195A, di/dt 930A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J R value shown is at time zero JC 2 2017-10-11