AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features V 75V DSS Advanced Process Technology R typ. 2.5m DS(on) Ultra Low On-Resistance max. Enhanced dV/dT and dI/dT capability 3.0m 175C Operating Temperature I 230A D (Silicon Limited) Fast Switching I 195A D (Package Limited) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S Specifically designed for Automotive applications, this HEXFET D G Power MOSFET utilizes the latest processing techniques to achieve G 2 extremely low on-resistance per silicon area. Additional features of D -Pak TO-262 AUIRFS3107 AUIRFSL3107 this design are 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable G D S device for use in Automotive applications and a wide variety of other Gate Drain Source applications Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFSL3107 TO-262 Tube 50 AUIRFSL3107 Tube 50 AUIRFS3107 2 AUIRFS3107 D -Pak Tape and Reel Left 800 AUIRFS3107TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 230 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 160 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 195 D C GS I Pulsed Drain Current 900 DM P T = 25C Maximum Power Dissipation 370 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 300 AS mJ I Avalanche Current See Fig.14,15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 14 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 JC C/W 2 R Junction-to-Ambient (PCB Mount), D Pak 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-11 AUIRFS/SL3107 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.09 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 2.5 3.0 m V = 10V, I = 140A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 230 S V = 50V, I = 140A DS D R Gate Resistance 1.2 G 20 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 75V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 160 240 I = 140A g D Q Gate-to-Source Charge 38 V = 38V gs DS nC Q Gate-to-Drain Charge 54 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 106 sync g gd t Turn-On Delay Time 19 V = 49V d(on) DD t Rise Time 110 I = 140A r D ns t Turn-Off Delay Time 99 R = 2.7 d(off) G t Fall Time 100 V = 10V f GS C Input Capacitance 9370 = 0V V iss GS C Output Capacitance 840 V = 50V oss DS C Reverse Transfer Capacitance 580 = 1.0MHz, See Fig. 5 rss pF Effective Output Capacitance (Energy Related) 1130 V = 0V, V = 0V to 60V C oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 1500 V = 0V, V = 0V to 60V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 230 S (Body Diode) showing the A Pulsed Source Current integral reverse I 900 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 140A,V = 0V SD J S GS 54 T = 25C J V = 64V DD t Reverse Recovery Time ns rr 60 T = 125C J I = 140A, F 103 T = 25C J di/dt = 100A/s Q Reverse Recovery Charge nC rr 132 T = 125C J I Reverse Recovery Current 3.6 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.045mH, R = 25 , I = 140A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 140A, di/dt 1380A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J R value shown is at time zero JC 2 2017-10-11