AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology V 100V DSS Ultra Low On-Resistance R typ. 11m DS(on) Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching Repetitive Avalanche Allowed up to Tjmax I 73A D Lead-Free, RoHS Compliant Automotive Qualified * D D Description S Specifically designed for Automotive applications, this HEXFET G Power MOSFET utilizes the latest processing techniques to achieve S D G extremely low on-resistance per silicon area. Additional features of 2 this design are a 175C junction operating temperature, fast TO-220 D Pak AUIRFB4610 AUIRFS4610 switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and a wide variety of other applications Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFB4610 TO-220 Tube 50 AUIRFB4610 Tube 50 AUIRFS4610 2 AUIRFS4610 D -Pak Tape and Reel Left 800 AUIRFS4610TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 73 D C GS I T = 100C Continuous Drain Current, V 10V 52 A D C GS I Pulsed Drain Current 290 DM P T = 25C Maximum Power Dissipation 190 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 370 mJ AS I Avalanche Current See Fig.14,15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 7.6 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.77 JC R Case-to-Sink, Flat, Greased Surface 0.50 CS C/W Junction-to-Ambient 62 R JA Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRFB/S4610 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.085 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 11 14 m V = 10V, I = 44A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100A GS(th) DS GS D gfs Forward Trans conductance 73 S V = 50V, I = 44A DS D R Gate Resistance 1.5 = 1.0MHz, open drain G 20 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 100V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 200 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 90 140 I = 44A g D Q Gate-to-Source Charge 20 nC V = 80V gs DS Q Gate-to-Drain Charge 36 V = 10V GS gd t Turn-On Delay Time 18 V = 65V d(on) DD t Rise Time 87 I = 44A r D ns t Turn-Off Delay Time 53 R = 5.6 d(off) G t Fall Time 70 V = 10V f GS C Input Capacitance 3550 V = 0V iss GS C Output Capacitance 260 V = 50V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5 rss pF Effective Output Capacitance (Energy Related) 330 V = 0V, V = 0V to 80V C oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 380 V = 0V, V = 0V to 80V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 73 S (Body Diode) showing the A integral reverse Pulsed Source Current I 290 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 44A,V = 0V SD J S GS 35 53 T = 25C V = 85V J DD t Reverse Recovery Time ns rr 42 63 T = 125C I = 44A, J F 44 66 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 65 98 T = 125C J I Reverse Recovery Current 2.1 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.39mH, R = 25 , I = 44A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 44A, di/dt 660A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-10-27