AUTOMOTIVE GRADE AUIRFS6535 AUIRFSL6535 HEXFET Power MOSFET Features Advanced Process Technology V 300V DSS Low On-Resistance R typ. 148m DS(on) 175C Operating Temperature Fast Switching max. 185m Repetitive Avalanche Allowed up to Tjmax I 19A D Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing S S D techniques to achieve extremely low on-resistance per silicon G G area. Additional features of this design are a 175C junction 2 D Pak TO-262 operating temperature, fast switching speed and improved AUIRFS6535 AUIRFSL6535 repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in G D S Automotive applications and a wide variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFSL6535 TO-262 Tube 50 AUIRFSL6535 Tube 50 AUIRFS6535 2 AUIRFS6535 D -Pak Tape and Reel Left 800 AUIRFS6535TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 19 D C GS A I T = 100C Continuous Drain Current, V 10V 13 D C GS I Pulsed Drain Current 100 DM P T = 25C Maximum Power Dissipation 210 W D C Linear Derating Factor 1.4 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 216 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 310 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.71 JC C/W Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-08-23 AUIRFS/L6535 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 300 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.39 V/C Reference to 25C, I = 5.0mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 148 185 m V = 10V, I = 11A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 150A GS(th) DS GS D gfs Forward Trans conductance 15 S V = 50V, I = 11A DS D 20 V = 300V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 300V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 38 57 I = 11A g D Q Gate-to-Source Charge 12 nC V = 150V gs DS Q Gate-to-Drain Charge 13 V = 10V gd GS t Turn-On Delay Time 15 V = 300V d(on) DD t Rise Time 16 I = 11A r D ns t Turn-Off Delay Time 22 R = 5.0 d(off) G V = 10V t Fall Time 10 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 2340 V = 0V iss GS C Output Capacitance 195 V = 25V oss DS = 1.0MHz C Reverse Transfer Capacitance 40 rss pF C Output Capacitance 1750 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 66 V = 0V, V = 240V = 1.0MHz oss GS DS C Effective Output Capacitance 130 V = 0V, V = 0V to 240V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 19 S (Body Diode) showing the A Pulsed Source Current integral reverse I 100 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 11A,V = 0V SD J S GS t Reverse Recovery Time 190 285 ns T = 25C ,I = 11A, V = 150V rr J F DD Q Reverse Recovery Charge 990 1485 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 3.6mH, R = 50 , I = 11A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, starting T = 25C, L = 3.6mH, R = 50 , I = 11A, V =10V. J G AS GS 2 This is applied to D Pak When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2017-08-23