AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology D V 40V New Ultra Low On-Resistance DSS 175C Operating Temperature R typ. 2.6m Fast Switching DS(on) Repetitive Avalanche Allowed up to Tjmax G max. 3.3m Lead-Free, RoHS Compliant Automotive Qualified * S I 123A D (Silicon Limited) Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve D D extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and S S D reliable device for use in Automotive applications and wide variety G G of other applications. 2 TO-262 D Pak Applications AUIRFSL8403 AUIRFS8403 Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid GD S Heavy Loads Gate Drain Source DC-DC Converter Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRFSL8403 TO-262 Tube 50 AUIRFSL8403 AUIRFS8403 D2Pak Tube 50 AUIRFS8403 Tape and Reel Left 800 AUIRFS8403TRL Tape and Reel Right 800 AUIRFS8403TRR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Symbol Parameter Max. Units 123 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 87 A I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS 492 IDM Pulsed Drain Current 99 P T = 25C Maximum Power Dissipation W D C Linear Derating Factor 0.66 W/C 20 V Gate-to-Source Voltage V GS -55 to + 175 T Operating Junction and J T Storage Temperature Range C STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics 111 E Single Pulse Avalanche Energy AS (Thermally limited) mJ 160 E (tested) Single Pulse Avalanche Energy Tested Value AS I Avalanche Current A AR See Fig. 14, 15 , 24a, 24b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.52 JC C/W R Junction-to-Ambient (PCB Mount) D2 Pak 40 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.033 V/C Reference to 25C, I = 5mA (BR)DSS J D Static Drain-to-Source On-Resistance 2.6 3.3 m V = 10V, I = 70A RDS(on) GS D Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 100A VGS(th) DS GS D Drain-to-Source Leakage Current 1.0 V = 40V, V = 0V I DS GS DSS A 150 V = 40V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V I GS GSS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Internal Gate Resistance 1.6 R G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 269 S V = 10V, I = 70A DS D Q Total Gate Charge 62 93 I = 70A g D Q Gate-to-Source Charge 16 V =20V gs DS nC Q Gate-to-Drain Mille) Charge 20 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 42 I = 70A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 10 V = 26V d(on) DD t Rise Time 77 I = 70A r D ns t Turn-Off Delay Time 26 R =1 d(off) G t Fall Time 43 V = 10V f GS C Input Capacitance 3183 V = 0V iss GS C Output Capacitance 475 V = 25V oss DS C Reverse Transfer Capacitance 331 pF = 1.0 MHz, See Fig. 5 rss C eff. (ER) Effective Output Capacitance (Energy Related) 596 V = 0V, V = 0V to 32V , See Fig. 11 oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 688 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 118 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 472 S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.9 1.3 V T = 25C, I = 70A, V = 0V SD J S GS dv/dt Peak Diode Recovery 7.6 V/ns T = 175C, I = 70A, V = 40V J S DS t Reverse Recovery Time 22 T = 25C V = 34V, rr J R ns 24 T = 125C I = 70A J F di/dt = 100A/s Q Reverse Recovery Charge 15 T = 25C rr J nC 15 TJ = 125C I Reverse Recovery Current 1.0 A T = 25C RRM J Repetitive rating pulse width limited by max. junction temperature. C eff. (ER) is a fixed capacitance that gives the same energy as oss Limited by T , starting T = 25C, L = 0.046mH,R = 50, Jmax J G C while V is rising from 0 to 80% V . oss DS DSS I = 70A, V =10V. GS AS I 70A, di/dt 1174A/ s, V V , T 175C. SD DD (BR)DSS J This value determined from sample failure population, Pulse width 400s duty cycle 2%. starting T = 25C, L=0.046mH, R = 50, I = 70A, V =10V. J G AS GS C eff. (TR) is a fixed capacitance that gives the same charging oss time as C while V is rising from 0 to 80% V . oss DS DSS