AUTOMOTIVE GRADE AUIRFS8407-7P Features HEXFET Power MOSFET Advanced Process Technology D New Ultra Low On-Resistance V 40V DSS 175C Operating Temperature R typ.1.0m DS(on) Fast Switching Repetitive Avalanche Allowed up to Tjmax max. 1.3m Lead-Free, RoHS Compliant G I 306A D Automotive Qualified * (Silicon Limited) Description I 240A S D (Package Limited) Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon D area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in S S Automotive applications and wide variety of other applications. S S S Applications G 2 D Pak 7 Pin Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid GD S Heavy Loads Gate Drain Source DC-DC Applications Base part number Package Type Standard Pack Orderable Part Number Form Quantity Tube 50 AUIRFS8407-7P AUIRFS8407-7P D2Pak-7PIN Tape and Reel Left 800 AUIRFS8407-7TRL Tape and Reel Right 800 AUIRFS8407-7TRR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 306 D C GS 216 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS A 240 I T = 25C Continuous Drain Current, V 10V (Package Limited) D C GS I Pulsed Drain Current 1040 DM P T = 25C Maximum Power Dissipation 231 W D C Linear Derating Factor 1.5 W/C 20 V Gate-to-Source Voltage V GS Single Pulse Avalanche Energy E 344 AS (Thermally limited) mJ E Single Pulse Avalanche Energy Tested Value 508 AS (tested) Avalanche Current I See Fig. 14, 15, 24a, 24b A AR Repetitive Avalanche Energy E mJ AR -55 to + 175 T Operating Junction and J T Storage Temperature Range C STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRFS8407-7P Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 C/W JC R Junction-to-Ambient (PCB Mount) 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.035 V/C Reference to 25C, I = 1.0mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.0 1.3 m V = 10V, I = 100A DS(on) GS D V Gate Threshold Voltage 2.2 3.9 V V = V , I = 150 A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 V = 40V, V = 0V DSS DS GS A 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.2 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 122 S V = 10V, I = 100A DS D Q Total Gate Charge 150 225 I = 100A g D Q Gate-to-Source Charge 41 V =20V gs DS nC Q Gate-to-Drain Mille) Charge 51 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 99 I = 100A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 18 V = 20V d(on) DD t Rise Time 62 I = 30A r D ns t Turn-Off Delay Time 78 R = 2.7 d(off) G t Fall Time 51 V = 10V f GS C Input Capacitance 7437 V = 0V iss GS C Output Capacitance 1097 V = 25V oss DS C Reverse Transfer Capacitance 748 pF = 1.0 MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 1314 V = 0V, V = 0V to 32V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 1735 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 306 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1040 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 1.3 V T = 25C, I = 100A, V = 0V SD J S GS dv/dt Peak Diode Recovery 3.5 V/ns T = 175C, I = 100A, V = 40V J S DS t Reverse Recovery Time 37 T = 25C V = 34V, rr J R ns 38 T = 125C I = 100A J F Q Reverse Recovery Charge 34 T = 25C di/dt = 100A/s rr J nC 36 T = 125C J I Reverse Recovery Current 1.8 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes: Calculated continuous current based on maximum allowable Pulse width 400s duty cycle 2%. junction temperature. Bond wire current limit is 240A. Note that C eff. (TR) is a fixed capacitance that gives the same charging time oss current limitations arising from heating of the device leads may as C while V is rising from 0 to 80% V . oss DS DSS occur with some lead mounting arrangements. (Refer to AN-1140) C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.069mH, R = 50, When mounted on 1 square PCB (FR-4 or G-10 Material). Jmax J G For recommended footprint and soldering techniques I = 100A, V =10V. Part not recommended for use above AS GS refer to application note AN-994. this value. R is measured at T approximately 90C. J I 100A, di/dt 1288A/ s, V V , T 175C. SD DD (BR)DSS J R value shown is at time zero. JC www.irf.com 2013 International Rectifier April 30, 2013 2