AUIRFS8408 Infineon

AUTOMOTIVE GRADE HEXFET Power MOSFET V 40V DSS R typ. 1.3m DS(on) % & max. 1.6m ( I 317A D (Silicon Limited) % ) *& + , - I 195A D (Package Limited) , , ) *./%. 0 &%. 1 2 D D D ( 3 , , ) , 3 , 4 5 ( ,, S S D 4 , , G G G 3 2 TO-262 Applications D Pak S AUIRFSL8408 AUIRFS8408 . & 6. &7 8 & & 9& 0 * 4 GD S * Gate Drain Source &0 & Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRFSL8408 TO-262 Tube 50 AUIRFSL8408 2 AUIRFS8408 D Pak Tube 50 AUIRFS8408 Tape and Reel Left 800 AUIRFS8408TRL Tape and Reel Right 800 AUIRFS8408TRR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 317 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 224 D C GS A ID TC = 25C Continuous Drain Current, VGS 10V (Package Limited) 195 I Pulsed Drain Current 1270 DM P T = 25C W Maximum Power Dissipation 294 D C Linear Derating Factor 1.96 W/C V 20 V Gate-to-Source Voltage GS T Operating Junction and -55 to + 175 J T C Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics Single Pulse Avalanche Energy E 490 AS (Thermally limited) mJ 800 E Single Pulse Avalanche Energy Tested Value AS (tested) Avalanche Current I See Fig. 14, 15, 24a, 24b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.51 C/W R Junction-to-Ambient (PCB Mount) 40 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage V V = 0V, I = 250A (BR)DSS 40 GS D V /T Breakdown Voltage Temp. Coefficient V/C = 5mA (BR)DSS J 0.032 Reference to 25C, ID R Static Drain-to-Source On-Resistance V = 10V, I = 100A DS(on) 1.3 1.6 m GS D V Gate Threshold Voltage V V = V , I = 250A GS(th) 2.2 3.0 3.9 DS GS D I Drain-to-Source Leakage Current 1.0 V = 40V, V = 0V DSS DS GS A 150 VDS = 40V, VGS = 0V, TJ = 125C IGSS Gate-to-Source Forward Leakage 100 VGS = 20V nA Gate-to-Source Reverse Leakage -100 VGS = -20V R Internal Gate Resistance G 2.1 Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 211 S V = 10V, I = 100A DS D Qg Total Gate Charge 216 324 ID = 100A Q Gate-to-Source Charge 51 V =20V gs DS nC Qgd Gate-to-Drain Mille) Charge 77 VGS = 10V Q Total Gate Charge Sync. (Q - Q ) 139 I = 100A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 29 V = 26V d(on) DD t Rise Time 202 I = 100A r D ns t Turn-Off Delay Time 108 R = 2.4 d(off) G t Fall Time 119 V = 10V f GS Ciss Input Capacitance 10820 VGS = 0V Coss Output Capacitance 1540 VDS = 25V Reverse Transfer Capacitance 1140 Crss pF = 1.0 MHz, See Fig. 5 C eff. (ER) 1880 V = 0V, V =0V to 32V See Fig. 11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 2208 V = 0V, V = 0V to 32V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol D 317 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 1270 S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.9 1.3 V T = 25C, I = 100A, V = 0V SD J S GS dv/dt Peak Diode Recovery 5.0 V/ns T = 175C, I = 100A, V = 40V J S DS t Reverse Recovery Time 38 T = 25C V = 34V, rr J R ns 37 T = 125C I = 100A J F Qrr Reverse Recovery Charge 50 TJ = 25C di/dt = 100A/ s nC 50 T = 125C J I Reverse Recovery Current 1.9 A T = 25C RRM J 2 %&&6 ( -7 * 1 & 8&7 1 9 %& 1 & 8&7 1 ( : < 2 = % > & ) * + * , - . + ) , & & /+ , &+ = < % 0 , && + 1 , &1 2 * &. 2 0 && + 3 4&5 36 + 1 1 + * 5 .