HEXFET Power MOSFET 40V V DSS 0.70m R typ. DS(on) % & max. 1.0m ( 397A I D (Silicon Limited) % ) *& 240A I D (Package Limited) + , - , , ) *./%. D 0 &%. 1 2 ( 3 , , ) , 3 , 4 5 ( ,, G 4 , , 3 S Applications . & 6. &7 8 & GD S & 9& 0 * 4 Gate Drain Source * &0 & Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity 2 AUIRFS8408-7P Tube 50 AUIRFS8408-7P D Pak 7 Pin Tape and Reel Left 800 AUIRFS8408-7TRL Tape and Reel Right 800 AUIRFS8408-7TRR % & & ) *+,-. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 397 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS 280 A I T = 25C Continuous Drain Current, V 10V (Package Limited) D C GS 240 I DM Pulsed Drain Current 1300 P T = 25C W D C Maximum Power Dissipation 294 Linear Derating Factor 1.96 W/C VGS Gate-to-Source Voltage 20 V T -55 to + 175 J Operating Junction and T C STG Storage Temperature Range 300 Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 501 AS (Thermally limited) mJ 809 E AS (tested) Single Pulse Avalanche Energy Tested Value Avalanche Current I See Fig. 14, 15, 24a, 24b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R qJC Junction-to-Case 0.51 C/W R 40 qJA Junction-to-Ambient (PCB Mount) Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.030 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.7 1.0 m V = 10V, I = 100A DS(on) GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 V = 40V, V = 0V DSS DS GS A 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Internal Gate Resistance 2.0 R G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 156 S V = 10V, I = 100A DS D Q Total Gate Charge 210 315 I = 100A g D Q Gate-to-Source Charge 55 V =20V gs DS nC Q Gate-to-Drain Mille) Charge 66 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 144 I = 100A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 23 V = 26V d(on) DD t Rise Time 125 I = 100A r D ns t Turn-Off Delay Time 107 R = 2.6 d(off) G t Fall Time 85 V = 10V f GS C Input Capacitance 10250 V = 0V iss GS Coss Output Capacitance 1540 VDS = 25V C Reverse Transfer Capacitance 1060 pF = 1.0 MHz, See Fig. 5 rss C eff. (ER) 1880 V = 0V,V = 0V to 32V ,See Fig.11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 2147 V = 0V, V = 0V to 32V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 397 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1300 S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.9 1.3 V T = 25C, I = 100A, V = 0V SD J S GS dv/dt 2.7 V/ns T = 175C, I = 100A, V = 40V Peak Diode Recovery J S DS trr Reverse Recovery Time 44 TJ = 25C VR = 34V, ns 46 T = 125C I = 100A J F di/dt = 100A/ s Q Reverse Recovery Charge 43 T = 25C rr J nC 44 T = 125C J I Reverse Recovery Current 1.9 A T = 25C RRM J 122< *= - - ) / 0 *12 - 9 2 >2= 9 3 - (% ) - 9 2 >2= 9 ( 3&4412) 4 A -0 (B &1 C&42 ) / B A 5 . 6 *+,-. 5 6 2 422 7. 6 +2. D 3&EE1 8 6 422 . 9 6429 E2,- 8 422 . : 4 :< . 9 9 . 4 +,-