HEXFET Power MOSFET 40V V DSS typ. 0.55m R DS(on) max. 0.75m % & ( 522A I D (Silicon Limited) % ) *& 240A I D (Package Limited) + , - D , , ) *./%. 0 &%. 1 2 ( 3 , , ) , 3 G , 4 5 ( ,, 4 , , 3 S Applications . & 6. &7 GD S 8 & Gate Drain Source & 9& 0 * 4 * &0 & Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity 2 AUIRFS8409-7P Tube 50 AUIRFS8409-7P D Pak 7 Pin Tape and Reel Left 800 AUIRFS8409-7TRL Tape and Reel Right 800 AUIRFS8409-7TRR % & & ) *+,-. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS 522 I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS 369 A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I DM Pulsed Drain Current 1200 P T = 25C W D C Maximum Power Dissipation 375 Linear Derating Factor 2.5 W/C V 20 V GS Gate-to-Source Voltage T J Operating Junction and -55 to + 175 T STG Storage Temperature Range C 300 Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 764 AS (Thermally limited) mJ 1485 E AS (tested) Single Pulse Avalanche Energy Tested Value Avalanche Current I See Fig. 14, 15, 24a, 24b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.4 C/W R 40 JA Junction-to-Ambient (PCB Mount) HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.026 V/C Reference to 25C, I = 2mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.55 0.75 V = 10V, I = 100A DS(on) m GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 V = 40V, V = 0V DSS DS GS A 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Internal Gate Resistance 2.2 R G Dynamic TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 176 S V = 10V, I = 100A DS D Q Total Gate Charge 305 460 I = 100A g D Q Gate-to-Source Charge 84 V =20V gs DS nC Q Gate-to-Drain Mille) Charge 96 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 209 I = 100A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 32 V = 20V d(on) DD t Rise Time 148 I = 100A r D ns t Turn-Off Delay Time 149 R = 2.7 d(off) G t Fall Time 107 V = 10V f GS C Input Capacitance 13975 V = 0V iss GS Output Capacitance 2140 = 25V C V oss DS C Reverse Transfer Capacitance 1438 = 1.0 MHz, See Fig. 5 pF rss C eff. (ER) 2620 V = 0V,V =0V to 32V , See Fig. 11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 3306 V = 0V, V = 0V to 32V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D 522 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 1200 S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.8 1.2 V T = 25C, I = 100A, V = 0V SD J S GS dv/dt V/ns T = 175C, I = 100A, V = 40V Peak Diode Recovery 1.6 J S DS t Reverse Recovery Time 50 T = 25C V = 34V, rr J R ns 58 T = 125C I = 100A J F di/dt = 100A/ s Q Reverse Recovery Charge 59 T = 25C rr J nC 72 T = 125C J I Reverse Recovery Current 2.2 A T = 25C RRM J - 122< *= / 0 *12 - ) 3 - : 2 >2= : - (% ) ( 3&4412) - : 2 >2= : / 4 A -0 (B &1 C&42 ) B A 5 . 6 *+,-. 5 6 2 4+7 8. 6 +2. D 3&EE1 9 6 422 . : 642: E2,- 9 422 . 4127 < . : : . 4 +,-