AUTOMOTIVE GRADE AUIRFSA8409-7P Features V 40V DSS Advanced Process Technology R typ. 0.50m DS(on) New Ultra Low On-Resistance max. 175C Operating Temperature 0.69m Fast Switching I 523A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax I 360A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These 2 D PAK-7TP features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety G D S of other applications. Applications Gate Drain Source Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid Heavy Loads DC-DC Applications Standard Pack Base Part Number Package Type Complete Part Number Form Quantity AUIRFSA8409-7P Tube 50 2 AUIRFSA8409-7P D PAK-7TP Tape and Reel Left 800 AUIRFSA8409-7TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 523 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 370 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 360 D C GS I Pulsed Drain Current 1440* DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy 743 AS (Thermally Limited) mJ Single Pulse Avalanche Energy 1450 E AS (Thermally Limited) I Avalanche Current A AR See Fig. 14, 15, 24a, 24b E Repetitive Avalanche Energy mJ AR HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2016-01-11 AUIRFSA8409-7P Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.4 R JC C/W Junction-to-Ambient (PCB Mount) 40 R JA Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.038 V/C Reference to 25C, I = 2.0mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.50 0.69 V = 10V, I = 100A m GS D DS(on) V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 250A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.3 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 180 S V = 10V, I = 100A DS D Q Total Gate Charge 305 460 I = 100A g D Q Gate-to-Source Charge 84 V = 20V gs DS nC Q Gate-to-Drain Mille) Charge 96 V = 10V GS gd Q Total Gate Charge Sync. (Q - Q) 209 sync g gd t Turn-On Delay Time 21 V = 20V d(on) DD t Rise Time 94 I = 100A D r ns t Turn-Off Delay Time 150 R = 2.7 d(off) G V = 10V t Fall Time 90 f GS C Input Capacitance 13975 V = 0V iss GS C Output Capacitance 2140 V = 25V oss DS C Reverse Transfer Capacitance 1438 pF = 1.0 MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 2620 V = 0V, V = 0V to 32V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 3306 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current 523 MOSFET symbol I A S (Body Diode) showing the Pulsed Source Current 1440* integral reverse I A SM (Body Diode) p-n junction diode. V Diode Forward Voltage 0.8 1.3 V T = 25C, I = 100A, V = 0V SD J S GS dv/dt Peak Diode Recovery 3.1 V/ns T = 175C, I = 100A, V = 40V J S GS 59 T = 25C J t Reverse Recovery Time ns V = 34V, rr R 60 T = 125C J I = 100A F 96 T = 25C J Q Reverse Recovery Charge nC rr di/dt = 100A/s 98 T = 125C J I Reverse Recovery Current 2.7 A T = 25C RRM J Notes: Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss Calculated continuous current based on maximum allowable junction while VDS is rising from 0 to 80% VDSS. temperature. Bond wire current limit is 360A. Note that current Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while limitations arising from heating of the device leads may occur with VDS is rising from 0 to 80% VDSS. some lead mounting arrangements. (Refer to AN-1140) When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended Repetitive rating pulse width limited by max. junction footprint and soldering techniques refer to application note AN-994. temperature. R is measured at TJ approximately 90C. Limited by TJmax, starting TJ = 25C, L = 0.15mH Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 53A, V =10V. Jmax J G AS GS RG = 50, IAS = 100A, VGS =10V. * Pulse drain current is limited to 1440A by source bonding technology ISD 100A, di/dt 1070A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s duty cycle 2%. 2 2016-01-11