AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology New Ultra Low On-Resistance D V 40V DSS 175C Operating Temperature R typ. 1.4m Fast Switching DS(on) Repetitive Avalanche Allowed up to Tjmax (SMD version) max. 1.8m Lead-Free, RoHS Compliant G I 250A Automotive Qualified * D (Silicon Limited) S Description I 195A D (Package Limited) Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve D D extremely low on-resistance per silicon area. Additional features of D this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable S S S D device for use in Automotive applications and wide variety of other D G G G applications. 2 TO-262 TO-220AB D Pak Applications AUIRFSL8407 AUIRFB8407 AUIRFS8407 Electric Power Steering (EPS) Battery Switch GD S Start/Stop Micro Hybrid Gate Drain Source Heavy Loads DC-DC Applications Ordering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number AUIRFB8407 TO-220 Tube 50 AUIRFB8407 AUIRFSL8407 TO-262 Tube 50 AUIRFSL8407 AUIRFS8407 D2Pak Tube 50 AUIRFS8407 AUIRFS8407 D2Pak Tape and Reel Left 800 AUIRFS8407TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Symbol Parameter Max. Units 250 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 180 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS 1000 I Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 230 W D C Linear Derating Factor 1.5 W/C 20 V Gate-to-Source Voltage V GS -55 to + 175 T Operating Junction and J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 10lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 350 mJ AS (Thermally limited) 500 E (tested) Single Pulse Avalanche Energy Tested Value AS Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.029 V/C Reference to 25C, I = 1mA (BR)DSS J D R SMD 1.4 1.8 V = 10V, I = 100A DS(on) GS D R TO-220 Static Drain-to-Source On-Resistance 1.6 2.0 m V = 10V, I = 100A DS(on) GS D V Gate Threshold Voltage 2.0 3.0 4.0 V V = V , I = 150A GS(th) DS GS D I Drain-to-Source Leakage Current 1.0 A V = 40V, V = 0V DSS DS GS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.2 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 160 S V = 10V, I = 100A DS D Q Total Gate Charge 150 225 nC I = 100A g D Q Gate-to-Source Charge 41 V =20V gs DS Q Gate-to-Drain Mille) Charge 51 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 99 I = 100A, V =20V, V = 10V sync g gd D DS GS t Turn-On Delay Time 19 ns V = 20V d(on) DD t Rise Time 70 I = 30A r D t Turn-Off Delay Time 78 R = 2.7 d(off) G t Fall Time 53 V = 10V f GS C Input Capacitance 7330 pF V = 0V iss GS C Output Capacitance 1095 V = 25V oss DS C Reverse Transfer Capacitance 745 = 1.0 MHz, See Fig. 5 rss C eff. (ER) Effective Output Capacitance (Energy Related) 1310 V = 0V, V = 0V to 32V , See Fig. 11 oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 1735 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 250 A MOSFET symbol S (Body Diode) showing the G 1000 I Pulsed Source Current A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 1.3 V T = 25C, I = 100A, V = 0V SD J S GS dv/dt Peak Diode Recovery 3.0 V/ns T = 175C, I = 100A, V = 40V J S DS t Reverse Recovery Time 30 ns T = 25C V = 34V, rr J R 30 T = 125C I = 100A J F di/dt = 100A/s Q Reverse Recovery Charge 24 nC T = 25C rr J 25 T = 125C J I Reverse Recovery Current 1.3 A T = 25C RRM J Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Case-to-Sink, Flat Greased Surface, TO-220 0.50 CS C/W R Junction-to-Ambient, TO-220 62 JA 2 R Junction-to-Ambient (PCB Mount) , D Pak 40 JA