AUIRFZ24NS AUTOMOTIVE GRADE AUIRFZ24NL HEXFET Power MOSFET Features Advanced Planar Technology V 55V Low On-Resistance DSS Dynamic dV/dT and dI/dT capability 175C Operating Temperature R max. 0.07 DS(on) Fast Switching Fully Avalanche Rated I 17A D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S Specifically designed for Automotive applications, this HEXFET D G Power MOSFET utilizes the latest processing techniques to achieve G 2 extremely low on-resistance per silicon area. Additional features of D -Pak TO-262 AUIRFZ24NL AUIRFZ24NS this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and a wide variety Gate Drain Source of other applications Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFZ24NL TO-262 Tube 50 AUIRFZ24NL Tube 50 AUIRFZ24NS 2 AUIRFZ24NS D -Pak Tape and Reel Left 800 AUIRFZ24NSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 17 D C GS I T = 100C Continuous Drain Current, V 10V 12 A D C GS I Pulsed Drain Current 68 DM P T = 25C Maximum Power Dissipation 3.8 D A W P T = 25C Maximum Power Dissipation 45 D C Linear Derating Factor 0.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 71 mJ AS I Avalanche Current 10 A AR E Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery 6.8 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 3.3 JC C/W 2 R Junction-to-Ambient (PCB Mount), D Pak 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-13 AUIRFZ24NS/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.07 V = 10V, I = 10A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 4.5 S V = 25V, I = 10A DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V,V = 0V,T =150C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 20 I = 10A g D Q Gate-to-Source Charge 5.3 nC V = 44V gs DS Q Gate-to-Drain Charge 7.6 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 4.9 V = 28V d(on) DD t Rise Time 34 I = 10A r D ns t Turn-Off Delay Time 19 R = 24 d(off) G t Fall Time 27 R = 2.6, See Fig. 10 f D Between lead, L Internal Source Inductance 7.5 nH S and center of die contact C Input Capacitance 370 V = 0V iss GS C Output Capacitance 140 pF V = 25V oss DS C Reverse Transfer Capacitance 65 = 1.0MHz, See Fig. 5 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 17 S (Body Diode) showing the A integral reverse Pulsed Source Current I 68 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 10A,V = 0V SD J S GS t Reverse Recovery Time 56 83 ns T = 25C ,I = 10A rr J F Q Reverse Recovery Charge 120 180 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) Limited by T starting T = 25C, L = 1.0mH, R = 25 , I = 10A, V =10V. (See fig.12) Jmax, J G AS GS I 10A, di/dt 280A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2017-10-13