AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology V 55V DSS Ultra Low On-Resistance 175C Operating Temperature R max. 13.9m DS(on) Fast Switching Repetitive Avalanche Allowed up to Tjmax I 51A D Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed for Automotive applications, this HEXFET Power S D G MOSFET utilizes the latest processing techniques to achieve extremely low G on-resistance per silicon area. Additional features of this design are a 175C 2 TO-220AB D Pak junction operating temperature, fast switching speed and improved repetitive AUIRFZ44Z AUIRFZ44ZS avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide G D S variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFZ44Z TO-220 Tube 50 AUIRFZ44Z Tube 50 AUIRFZ44ZS 2 AUIRFZ44ZS D -Pak Tape and Reel Left 800 AUIRFZ44ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 51 D C GS A I T = 100C Continuous Drain Current, V 10V (See Fig. 9) 36 D C GS I Pulsed Drain Current 200 DM P T = 25C Maximum Power Dissipation 80 W D C Linear Derating Factor 0.53 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 86 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 105 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.87 JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W Junction-to-Ambient 62 R JA R Junction-to-Ambient ( PCB Mount, steady state) 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-25 AUIRFZ44Z/ZS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.054 V/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 11.1 13.9 m V = 10V, I = 31A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 22 S V = 25V, I = 31A DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 200 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 29 43 I = 31A g D Q Gate-to-Source Charge 7.2 11 nC V = 44V gs DS Q Gate-to-Drain Charge 12 18 V = 10V gd GS t Turn-On Delay Time 14 V = 28V d(on) DD t Rise Time 68 I = 31A r D ns t Turn-Off Delay Time 33 R = 15 d(off) G t Fall Time 41 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 1420 V = 0V iss GS C Output Capacitance 240 V = 25V oss DS C Reverse Transfer Capacitance 130 = 1.0MHz,See Fig.5 rss pF C Output Capacitance 830 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 190 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 300 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 51 S (Body Diode) showing the A Pulsed Source Current integral reverse I 200 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C,I = 31A,V = 0V SD J S GS t Reverse Recovery Time 23 35 ns T = 25C ,I = 31A , V = 28V rr J F DD Q Reverse Recovery Charge 17 26 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) Limited by T starting T = 25C, L = 0.18mH, R = 25 , I = 31A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 31A, di/dt 840A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population 100% tested to this value in production. This is applied to D2Pak, when mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. R is rated at T of approximately 90C. J 2 2017-09-25