AUTOMOTIVE GRADE
ULTRAFAST IGBT WITH
CooliRIGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
Designed And Qualified for Automotive Applications
V = 600V
CES
Ultra Fast Switching IGBT:70-200kHz
V typ. = 1.8V
CE(on)
Extremely Low Switching Losses
Maximum Junction Temperature 175 C
G
I @T =100C = 41A
C C
Square RBSOA
E
Positive V Temperature Coefficient T max = 175C
CE (on) J
n-channel
Benefits
Optimized High Frequency Switching Applications
Rugged Transient Performance for Increased
Reliability
E
E
C
Excellent Current Sharing in Parallel Operation C
G
G
TO-247AD
TO-247AC
Applications
AUIRGF65G40D0
AUIRGP65G40D0
DC-DC Converter
PFC
GC E
G a te C o lle c to r E m itte r
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRGP65G40D0 TO-247AC Tube 25 AUIRGP65G40D0
AUIRGF65G40D0 TO-247AD Tube 25 AUIRGF65G40D0
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mountedand still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified.
A
Parameter Max. Units
V
Collector-to-Emitter Voltage 600 V
CES
I @ T = 25C Continuous Collector Current 62
C C
I @ T = 100C Continuous Collector Current
41
C C
I Nominal Current @ 200kHz A
20
NOMINAL
I
Pulse Collector Current 84
CM
I Clamped Inductive Load Current
112
LM
I @ T = 25C
Diode Continous Forward Current 46.1
F C
I @ T = 100C
Diode Continous Forward Current 30
F C
I Maximum Repetitive Forward Current 112
FRM
V
Gate-to-Emitter Voltage 20 V
GE
P @ T = 25C Maximum Power Dissipation 625
D C
W
P @ T = 100C
Maximum Power Dissipation 313
D C
T
Operating Junction and
J
-55 to +175
T C
Storage Temperature Range
STG
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm)
Thermal Resistance
Parameter Min. Typ. Max. Units
R (IGBT) Junction-to-Case-(each IGBT)
0.24
JC
Junction-to-Case-(each Diode)
R (Diode) 1.78
JC
C/W
R
Case-to-Sink (flat, greased surface) 0.24
CS
R
Junction-to-Ambient (typical socket mount) 40
JA
6.0 (0.21) g (oz)
*Qualification standards can be found at
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A
(BR)CES GE C
V / T Temperature Coeff. of Breakdown Voltage 0.18 V/C V = 0V, I = 1.0mA (25C-175C)
(BR)CES J GE C
1.4 I = 12A, V = 15V, T = 25C
C GE J
1.8 2.2 I = 20A, V = 15V, T = 25C
C GE J
V Collector-to-Emitter Saturation Voltage 1.9 I = 12A, V = 15V, T = 150C
CE(on) C GE J
2.6 V I = 20A, V = 15V, T = 150C
C GE J
2.2 I = 12A, V = 15V, T = 175C
C GE J
3.0 I = 20A, V = 15V, T = 175C
C GE J
V Gate Threshold Voltage 3.0 5.5 V V = V , I = 250A
GE(th) CE GE C
V / TJ Threshold Voltage temp. coefficient -12 mV/C V = V , I = 1.0mA (25C - 175C)
GE(th) CE GE C
gfe Forward Transconductance 36 S V = 50V, I = 20A
CE C
I Collector-to-Emitter Leakage Current 3.2 25 A V = 0V, V = 600V
CES GE CE
0.81 mA V = 0V, V = 600V, T = 175C
GE CE J
V Diode Forward Voltage Drop 1.7 2.45 V I = 20A
FM F
1.4 I = 20A, T = 175C
F J
I Gate-to-Emitter Leakage Current 100 nA V = 20V
GES GE
Switching Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Q Total Gate Charge (turn-on) 180 270 I = 20A
g C
Q Gate-to-Emitter Charge (turn-on) 28 42 nC V = 15V
ge GE
Q Gate-to-Collector Charge (turn-on) 64 96 V = 400V
gc CC
E Turn-On Switching Loss 298 389 I = 20A, V = 400V, V = 15V
on C CC GE
E Turn-Off Switching Loss 147 234 J R = 4.7 , L = 485H, T = 25C
off G J
E Total Switching Loss 445 623 Energy losses include tail & diode reverse recovery
total
t Turn-On delay time 35 53 I = 20A, V = 400V, V = 15V
d(on) C CC GE
t Rise time 1229ns R = 4.7 , L = 485H, T = 25C
r G J
Turn-Off delay time 142 163
t
d(off)
t Fall time 15 32
f
E Turn-On Switching Loss 630 I = 20A, V = 400V, V =15V
on C CC GE
E Turn-Off Switching Loss 137 J R = 4.7 , L = 485H, T = 175C
off G J
E Total Switching Loss 767 Energy losses include tail & diode reverse recovery
total
t Turn-On delay time 33 I = 20A, V = 400V, V = 15V
d(on) C CC GE
t Rise time 12 ns R = 4.7 , L = 485H
r G
t Turn-Off delay time 165 T = 175C
d(off) J
t Fall time 16
f
C Input Capacitance 4673 pF V = 0V
ies GE
C Output Capacitance 337 V = 30V
oes CC
C Reverse Transfer Capacitance 58 f = 1.0Mhz
res
Effective Output Capacitance (Time Related)
C eff. 406 V = 0V, V = 0V to 480V
oes GE CE
Effective Output Capacitance (Energy Related)
C eff. (ER) 162
oes
T = 175C, I = 80A
J C
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V
CC
Rg = 4.7 , V = +20V to 0V
GE
t Diode Reverse Recovery Time 41 ns T = 25C I = 20A, V = 200V,
rr J F R
70 T = 125C di/dt = 200A/s
J
Q Diode Reverse Recovery Charge 116 nC T = 25C I = 20A, V = 200V,
rr J F R
580 T = 125C di/dt = 200A/s
J
I Peak Reverse Recovery Current 4.8 A T = 25C I = 20A, V = 200V,
rr J F R
7.2 T = 125C di/dt = 200A/s
J
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