AUTOMOTIVE GRADE AUIRL7736M2TR Automotive DirectFET Power MOSFET Logic Level V 40V (BR)DSS Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and R typ. 2.2m DS(on) other Heavy Load Applications max. 3.0m Exceptionally Small Footprint and Low Profile I 112A D (Silicon Limited) High Power Density Q 52nC Low Parasitic Parameters g (typical) Dual Sided Cooling 175C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability S S Lead free, RoHS and Halogen free G DD S S Automotive Qualified * DirectFET ISOMETRIC M4 Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description The AUIRL7736M2 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. his HEXFET Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRL7736M2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7736M2 can be utilized together with the AUIRL7732S2 as a sync/control MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRL7736M2 DirectFET Medium Can AUIRL7736M2TR Tape and Reel 4800 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units V Drain-to-Source Voltage 40 DS V V Gate-to-Source Voltage 16 GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 112 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 79 D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 179 A D C GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 22 D A GS I Pulsed Drain Current 450 DM P T = 25C Power Dissipation 63 D C W P T = 25C Power Dissipation 2.5 D A E Single Pulse Avalanche Energy (Thermally Limited) 68 AS mJ E (Tested) Single Pulse Avalanche Energy 119 AS A I Avalanche Current AR See Fig. 16, 17, 18a, 18b E Repetitive Avalanche Energy mJ AR T Peak Soldering Temperature 260 P C T Operating Junction and -55 to + 175 J T Storage Temperature Range STG HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-29 AUIRL7736M2TR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 60 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 R C/W JA Junction-to-Can 2.4 R J-Can R Junction-to-PCB Mounted 1.0 J-PCB Linear Derating Factor 0.42 W/C Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.03 V/C Reference to 25C, I = 1.0mA V / T D (BR)DSS J 2.2 3.0 V = 10V, I = 67A GS D R Static Drain-to-Source On-Resistance m DS(on) 3.2 4.3 V = 4.5V, I = 56A GS D V Gate Threshold Voltage 1.0 1.8 2.5 V GS(th) V = V , I = 150A DS GS D Gate Threshold Voltage Coefficient -6.9 mV/C V / T GS(th) J gfs Forward Transconductance 152 S V = 10V, I = 67A DS D R Internal Gate Resistance 0.9 G 5.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 52 78 V = 20V g DS V = 4.5V Q Gate-to-Source Charge 8.1 gs1 GS Q Gate-to-Source Charge 6.2 I = 67A D gs2 nC Q Gate-to-Drain Mille) Charge 33 See Fig.11 gd Q Gate Charge Overdrive 4.7 godr Q Switch Charge (Q + Q) 39.2 sw gs2 gd Q Output Charge 31 V = 16V, V = 0V nC oss DS GS t Turn-On Delay Time 48 V = 20V, V = 4.5V d(on) DD GS I = 67A t Rise Time 210 r D ns t Turn-Off Delay Time 56 R = 6.8 d(off) G t Fall Time 76 f C Input Capacitance 5055 V = 0V iss GS C Output Capacitance 960 V = 25V oss DS C Reverse Transfer Capacitance 525 = 1.0 MHz rss pF C Output Capacitance 3540 V = 0V, V = 1.0V, = 1.0 MHz oss GS DS C Output Capacitance 860 V = 0V, V = 32V, = 1.0 MHz oss GS DS C eff. Effective Output Capacitance 1306 V = 0V, V = 0V to 32V oss GS DS Notes through are on page 3 2 2015-10-29