AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V 55V DSS Logic-Level Gate Drive R max. 0.065 Dynamic dv/dt Rating DS(on) 175C Operating Temperature I 17A D Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant D Automotive Qualified * Description S S D Specifically designed for Automotive applications, this Cellular G G design of HEXFET Power MOSFETs utilizes the latest D-Pak I-Pak processing techniques to achieve low on-resistance per silicon AUIRLU024N AUIRLR024N area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient G D S and reliable device for use in Automotive and a wide variety of Gate Drain Source other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRLU024N I-Pak Tube 75 AUIRLU024N Tube 75 AUIRLR024N AUIRLR024N D-Pak Tape and Reel Left 3000 AUIRLR024NTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 17 D C GS I T = 100C Continuous Drain Current, V 10V 12 A D C GS I Pulsed Drain Current 72 DM P T = 25C Maximum Power Dissipation 45 W D C Linear Derating Factor 0.3 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy (Thermally Limited) 68 AS mJ I Avalanche Current 11 A AR E Repetitive Avalanche Energy 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.3 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-05 AUIRLR/U024N Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.061 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D 0.065 V = 10V, I = 10A GS D R Static Drain-to-Source On-Resistance 0.080 V = 5.0V, I = 10A DS(on) GS D 0.110 V = 4.0V, I = 9.0A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 8.3 S V = 25V, I = 11A DS D 25 V = 55 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 15 I = 11A g D Q Gate-to-Source Charge 3.7 nC V = 44V gs DS Q Gate-to-Drain Charge 8.5 V = 5.0V, See Fig 6 and 13 gd GS t Turn-On Delay Time 7.1 = 28V V d(on) DD t Rise Time 74 I = 11A r D ns t Turn-Off Delay Time 20 R = 12 V = 5.0V d(off) G GS t Fall Time 29 R = 2.4 See Fig 10 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 480 V = 0V iss GS C Output Capacitance 130 pF V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 61 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 17 S (Body Diode) showing the A Pulsed Source Current integral reverse I 72 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 11A,V = 0V SD J S GS t Reverse Recovery Time 60 90 ns T = 25C ,I = 11A rr J F Q Reverse Recovery Charge 130 200 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) V = 25V, starting T = 25C, L = 790H, R = 25, I = 11A, V =10V. (See Fig.12) DD J G AS GS I 11A, di/dt 290A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. This is applied for I-PAK, L of D-PAK is measured between lead and center of die contact . S Uses IRFZ24N data and test conditions. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2017-10-05