AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive V 55V DSS Low On-Resistance Dynamic dV/dT Rating R max. 175C Operating Temperature 27m DS(on) Fast Switching Fully Avalanche Rated I 42A D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description Specifically designed for Automotive applications, this cellular S S D design of HEXFET Power MOSFETs utilizes the latest G G processing techniques to achieve low on-resistance per silicon D-Pak I-Pak area. This benefit combined with the fast switching speed and AUIRLR2905 AUIRLU2905 ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and G D S reliable device for use in Automotive and a wide variety of other Gate Drain Source applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRLU2905 I-Pak Tube 75 AUIRLU2905 Tube 75 AUIRLR2905 AUIRLR2905 D-Pak Tape and Reel Left 3000 AUIRLR2905TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 42 D C GS I T = 100C Continuous Drain Current, V 10V 30 D C GS A I Pulsed Drain Current 160 DM P T = 25C Maximum Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy (Thermally Limited) 210 AS mJ E Single Pulse Avalanche Energy (tested Value) 200 AS (tested) I Avalanche Current 25 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Peak Diode Recovery 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.4 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-11 AUIRLR/U2905 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.070 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D 0.027 V = 10V, I = 25A GS D R Static Drain-to-Source On-Resistance 0.030 V = 5.0V, I = 25A DS(on) GS D 0.040 V = 4.0V, I = 21A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 21 S V = 25V, I = 25A DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = - 16V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 48 I = 25A g D Q Gate-to-Source Charge 8.6 nC V = 44V gs DS Q Gate-to-Drain Charge 25 V = 5.0V gd GS t Turn-On Delay Time 11 = 28V V d(on) DD t Rise Time 84 I = 25A r D ns t Turn-Off Delay Time 26 R = 3.4V = 5.0V d(off) G GS t Fall Time 15 R = 1.1 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 1700 V = 0V iss GS C Output Capacitance 400 pF V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 150 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 42 S (Body Diode) showing the A Pulsed Source Current integral reverse I 160 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 25A, V = 0V SD J S GS t Reverse Recovery Time 80 120 ns T = 25C ,I = 25A rr J F Q Reverse Recovery Charge 210 320 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) V = 25V,Starting T = 25C, L = 470H, R = 25, I = 25A (See fig. 12) DD J G AS I 25A, di/dt 270A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. When mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. R is measured at T approximately 90C. j 2 2015-12-11