AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V 100V DSS Logic Level Gate Drive Dynamic dV/dT Rating R max. 105m DS(on) 175C Operating Temperature Fast Switching I 17A D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * S Description G Specifically designed for Automotive applications, this Stripe Planar D-Pak design of HEXFET Power MOSFETs utilizes the latest AUIRLR3410 processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well G D S known for, provides the designer with an extremely efficient and Gate Drain Source reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 AUIRLR3410 AUIRLR3410 D-Pak Tape and Reel Left 3000 AUIRLR3410TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 17 D C GS I T = 100C Continuous Drain Current, V 10V 12 A D C GS I Pulsed Drain Current 60 DM P T = 25C Maximum Power Dissipation 79 W D C Linear Derating Factor 0.53 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy (Thermally Limited) 150 mJ AS I Avalanche Current 9.0 A AR E Repetitive Avalanche Energy 7.9 mJ AR dv/dt Pead Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.9 JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-29 AUIRLR3410 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.122 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D 0.105 V = 10V, I = 10A GS D R Static Drain-to-Source On-Resistance 0.125 V = 5.0V, I = 10A DS(on) GS D 0.155 V = 4.0V, I = 9.0A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 7.7 S V = 25V, I = 9.0A DS D 25 V = 100 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 34 I = 9.0A g D Q Gate-to-Source Charge 4.8 nC V = 80V gs DS Q Gate-to-Drain Charge 20 V = 5.0V gd GS t Turn-On Delay Time 7.2 = 50V V d(on) DD t Rise Time 53 I = 9.0A r D ns t Turn-Off Delay Time 30 R = 6.0 d(off) G t Fall Time 26 V = 5.0V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 800 V = 0V iss GS C Output Capacitance 160 pF V = 25V oss DS = 1.0MHz C Reverse Transfer Capacitance 90 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 17 S (Body Diode) showing the A Pulsed Source Current integral reverse I 60 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 9.0A,V = 0V SD J S GS t Reverse Recovery Time 140 210 ns = 25C ,I = 9.0A T rr J F Q Reverse Recovery Charge 740 1100 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) V = 25V, starting T = 25C, L = 3.1mH, R = 25, I = 9.0A, V =10V. (See fig. 12) DD J G AS GS I 9.0A, di/dt 540A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. Uses IRL530N data and test conditions. This is applied for L of D-PAK is measured between lead and center of die contact. S When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 . R is measured at T approximately 90C. J 2 2015-10-29