AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology V 60V DSS Ultra Low On-Resistance R typ. 5.4m DS(on) Logic Level Gate Drive max. 6.8m 175C Operating Temperature I 99A D (Silicon Limited) Fast Switching I 50A D (Package Limited) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed for Automotive applications, this HEXFET G Power MOSFET utilizes the latest processing techniques to D-Pak achieve extremely low on-resistance per silicon area. Additional AUIRLR3636 features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient G D S and reliable device for use in Automotive applications and a wide Gate Drain Source variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 AUIRLR3636 AUIRLR3636 D-Pak Tape and Reel Left 3000 AUIRLR3636TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 99 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 70 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 50 D C GS I Pulsed Drain Current 396 DM P T = 25C Maximum Power Dissipation 143 W D C Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy (Thermally Limited) 170 mJ AS I Avalanche Current See Fig. 14, 15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 22 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.05 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-4 AUIRLR3636 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.07 V/C Reference to 25C, I = 5mA V / T (BR)DSS J D 5.4 6.8 V = 10V, I = 50A GS D R Static Drain-to-Source On-Resistance m DS(on) 6.6 8.3 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 100A GS(th) DS GS D gfs Forward Trans conductance 31 S V = 25V, I = 50A DS D R Internal Gate Resistance 0.6 G(Int) 20 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -16V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 33 49 I = 50A g D Q Gate-to-Source Charge 11 V = 30V gs DS nC Q Gate-to-Drain Charge 15 V = 4.5V gd GS Q Total Gate Charge Sync. (Q - Q) 18 sync g gd t Turn-On Delay Time 45 V = 39V d(on) DD t Rise Time 216 I = 50A r D ns t Turn-Off Delay Time 43 d(off) R = 7.5 G t Fall Time 69 V = 4.5V f GS C Input Capacitance 3779 V = 0V iss GS C Output Capacitance 332 V = 50V oss DS C Reverse Transfer Capacitance 163 pF = 1.0MHz rss C (ER) Effective Output Capacitance (Energy Related) 437 V = 0V, V = 0V to 48V oss eff. GS DS C (TR) Effective Output Capacitance (Time Related) 636 V = 0V, V = 0V to 48V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 99 S (Body Diode) showing the A Pulsed Source Current integral reverse I 396 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 50A,V = 0V SD J S GS t Reverse Recovery Time 27 T = 25C rr J ns V = 51V, R 32 T = 125C J I = 50A F Q Reverse Recovery Charge 31 T = 25C rr J nC di/dt = 100A/s 43 T = 125C J 2.1 A T = 25C J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 50A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.136mH, R = 25 , I = 50A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS I 50A, di/dt 1109A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C . (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss eff oss DS DSS C . (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss eff oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-11-4