BAR6403WE6327HTSA1 Infineon

BAR64-03W Low signal distortion, surface mount RF PIN diode Product description This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF voltages, and is best suited for frequencies as high as 3 GHz. Its nominal 50 m I-region width, combined with the typical 1.55 s carrier lifetime, result in a diode with low forward resistance and low distortion characteristics. Feature list Low signal distortion, charge carrier lifetime t = 1.55 s (typical) rr Very low capacitance C = 0.2 pF (typical) at voltage V = 0 and frequencies f 1 GHz R Low forward resistance R = 2.7 (typical) at forward current I = 10 mA and frequency f = 100 MHz F F Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm) Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Optimized for low bias current RF and high-speed interface switches and attenuators Wireless communication High speed data networks Device information Table 1 Part information Product name / Ordering code Package Configuration Marking Pieces / Reel BAR64-03W / BAR6403WE6327HTSA1 SOD323 Single, with leads blue 2 3 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v1.0 www.infineon.com 2018-06-30BAR64-03W Low signal distortion, surface mount RF PIN diode Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 2 2 Electrical performance in test fixture 3 2.1 DC characteristics . 3 2.2 AC characteristics 4 3 Thermal characteristics . 9 4 Package information SOD323 11 Revision history . 12 Disclaimer 13 1 Absolute maximum ratings Table 2 Absolute maximum ratings at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit Note or test condition Min. Max. Diode reverse voltage V 150 V R Forward current I 100 mA F 1) Total power dissipation P 250 mW T 112 C TOT S Junction temperature T 150 C J Operating temperature T -55 125 OP Storage temperature T -55 150 STG Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 T is the soldering point temperature. S Datasheet 2 v1.0 2018-06-30